Method of fabricating memory array having divided apart bit lines and partially divided bit line selector switches

ABSTRACT

A non-volatile data storage device comprises pairs of immediately adjacent and isolated-from-one-another local bit lines that are independently driven by respective and vertically oriented bit line selector devices. The isolation between the immediately adjacent and isolated-from-one-another local bit lines also isolates from one another respective memory cells of the non-volatile data storage device such that leakage currents cannot flow from memory cells connected to a first of the immediately adjacent and isolated-from-one-another local bit lines to memory cells connected to the second of the pair of immediately adjacent and isolated-from-one-another local bit lines. A method programming a desire one of the memory cells includes applying boosting voltages to word lines adjacent to the bit line of the desired memory cell while not applying boosting voltages to word lines adjacent to the other bit line of the pair.

BACKGROUND

Field of Disclosure

The present disclosure relates to apparatus and methods for non-volatiledata storage.

Description of Related Technology

In three-dimensionally selectable memory arrays, it is desirable tominimize line resistances of lines that carry addressing signals and tomaximize utilization of such lines, for example by sharing of resourcesin multiple directions.

One example of a three-dimensionally addressable array of non-volatilememory cells (a.k.a. non-volatile storage elements or “NVSE's”) usesvariable resistance memory elements. Each may be set to either a low orhigh resistance states and it (the variable resistance memory element)remains in that set state until subsequently re-set to the initialcondition. The variable resistance memory elements are each connectedbetween two orthogonally extending conductors (typically verticallyextending, bit lines and horizontally extending word lines) where theycross each other in a three-dimensional array organized as stackedlayers. The state of each such memory element is typically changed byproper voltages being placed on the intersecting conductors (on the bitlines and on the word lines). Since these voltages inherently spreadalong their respective bit lines and word lines so as to also be appliedto a large number of other unselected memory elements (because they areconnected along the same conductors as the selected memory elementsbeing programmed or read), diodes are commonly connected in series withthe variable resistive elements in order to reduce leakage currents thatcan flow through them. The desire to perform data reading andprogramming operations with a large number of memory elements inparallel results in reading or programming voltages being applied to avery large number of other memory elements. An example of an array ofvariable resistive elements and associated diodes is given in U.S.Patent Application Publication No. US 2009/0001344.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is an equivalent circuit of a portion of an exemplary firstthree-dimensional array of variable resistance memory elements, whereinthe array has vertically extending, local bit lines and horizontallyextending word lines.

FIG. 1B is an equivalent circuit of a portion of an exemplary secondthree-dimensional array of variable resistance memory elements, whereinthe array has vertically extending, pairs of local bit lines andhorizontally extending word lines.

FIG. 2 is a schematic block diagram of a re-programmable non-volatilememory system which can utilizes the memory array of FIG. 1A or FIG. 1B,and which indicates connection of the memory system with a host system.

FIG. 3A provides plan views of the two planes and substrate of thethree-dimensional array of FIG. 1A, with some additional structureadded.

FIG. 3B provides plan views of the two planes and substrate of thethree-dimensional array of FIG. 1B, with some additional structureadded.

FIG. 4 is an expanded view of a portion of one of the planes of FIG. 3A,annotated to show possible parasitic effects when programming datatherein.

FIG. 5 is an expanded view of a portion of one of the planes of FIG. 3A,annotated to show possible parasitic effects when reading datatherefrom.

FIG. 6 is an isometric view of a portion of the three-dimensional arrayshown in FIG. 1A according to a first specific example of animplementation thereof.

FIG. 7 is an equivalent circuit of a portion of an examplethree-dimensional array of variable resistance memory elements, whereinthe array has vertical bit lines and a pillar select layer, both ofwhich are above (and not in) the substrate.

FIG. 8A is a schematic that depicts a vertical bit line, a verticallyoriented select device and a global bit line.

FIG. 8B is a plan view that depicts a vertical bit line, a verticallyoriented select device and a global bit line.

FIG. 9 is a schematic of a portion of the memory system, depictingvertical bit lines above the substrate, vertically oriented selectdevices above the substrate and row select line drivers in thesubstrate.

FIG. 10A illustrates one embodiment of a memory structure in accordancewith FIG. 1A having vertical local bit lines above the substrate andvertically oriented select devices above the substrate that connect thebit lines to global bit lines.

FIG. 10B illustrates one embodiment of a memory structure in accordancewith FIG. 1B having vertical local bit lines above the substrate andvertically oriented select devices above the substrate that connect thebit lines to global bit lines.

FIG. 10C illustrates another embodiment of a memory structure inaccordance with FIG. 1B having vertical local bit lines above thesubstrate and vertically oriented select devices above the substratethat connect the bit lines to global bit lines.

FIG. 11A illustrates one embodiment of a memory structure with verticallocal bit lines above the substrate and vertically oriented selectdevices above the substrate that connect the bit lines to global bitlines.

FIG. 11B is a schematic of a portion of the memory system of FIG. 11A,depicting a method of programming a desired memory cell.

FIG. 12 is a schematic of a portion of the memory system, depictingvertical bit lines, vertically oriented select devices above thesubstrate and row select line drivers in the substrate.

FIG. 13 is a schematic of a portion of the memory system, depictingvertical bit lines, vertically oriented select devices above thesubstrate and word line combs (connected word lines).

FIG. 14 is a top view showing interdigitated fingers of two word linecombs and multiple vertical bit lines.

FIGS. 15A and 15B are flow charts describing embodiments for mono thememory system.

FIG. 16 is a flow chart describing one embodiment for reading the memorysystem.

FIG. 17 is a block diagram showing a row select line driver and theassociated row select line.

FIG. 18 is a schematic of a portion of the memory system, depictingvertical bit lines, vertically oriented select devices above thesubstrate, word line combs, and row select lines that run acrossmultiple blocks of memory elements.

FIG. 19 is a flow chart describing one embodiment of a process forFORMING.

FIG. 20 is a cross sectional view of an intermediate structure used toform a memory array in accordance with the one shown in FIG. 10C.

FIGS. 21A and 21B show the results of two interrelated process stepsapplied to the intermediate structure of FIG. 20.

FIGS. 22A and 22B show the results of two interrelated process stepsapplied to the intermediate structure of FIG. 21B.

FIGS. 23A and 23B show the results of two interrelated process stepsapplied to the intermediate structure of FIG. 22B.

DETAILED DESCRIPTION

An exemplary non-volatile data storage device comprises: a substrate(e.g., one having semiconductive components monolithically integratedtherein); a monolithic three dimensional array of memory cellspositioned above and not in the substrate; a plurality of word linesconnected to the memory cells; a plurality of global bit lines; aplurality of vertically oriented bit lines connected to the memorycells; and vertically oriented select devices that are above and not inthe substrate. New structures are provided here for the verticallyoriented select devices and the vertically oriented bit lines thatreduce leakage current and reduce power consumption. The new structuresprovide isolation gaps as between adjacent bit lines so that leakagecurrents cannot flow from one of the adjacent bit lines to the other. Amethod in accordance with the disclosure includes not having to applyboost voltages to some of the word lines and thus saving on powerconsumption.

The memory elements used in the three-dimensional array may be variableresistance memory elements. That is, the resistance (and thus inverselythe conductance) of the individual memory elements is typically changedas a result of a voltage placed across the orthogonally intersectingconductors to which the memory element is connected. Depending on thetype of variable resistive element, the state may change in response toa voltage across it, a level of current through it, an amount ofelectric field across it, a level of heat applied to it, and the like.With some variable resistive element materials, it is the amount of timethat the voltage, current, electric field, heat and the like is appliedto the element that determines if and when its conductive stateprogrammably changes and the direction in which the change takes place.In between such state changing operations, the resistance of the memoryelement remains unchanged, so it is non-volatile. The three-dimensionalarray architecture summarized above may be implemented with a memoryelement material selected from a wide variety of such materials havingdifferent properties and operating characteristics.

The resistance of the memory element, and thus its detectable storagestate, can be repetitively set from an initial level to another leveland then re-set back to the initial level. For some materials, theamount or duration of the voltage, current, electric field, heat and thelike applied to change its state in one direction is different(asymmetrical) with that applied to change it in another direction. Withat least two detectable and distinct states, each memory element canstore at least one-bit of data. With use of some materials, more thanone bit of data may be stored in each memory element by designating morethan two stable levels of resistance as detectable and distinct statesof the memory element. The three-dimensional array architecture hereinis quite versatile in the way it may be operated.

This three-dimensional architecture also allows for limiting the extentand number of unaddressed (non-selected) resistive memory elementsacross which an undesired level of voltage is applied during a readingand/or programming operation conducted on an addressed (selected) one ormore memory elements. The risk of disturbing the states of unaddressedmemory elements and the levels of leakage currents passing throughunaddressed elements may be significantly reduced from those experiencedin other arrays using the same memory element material. Leakage currentsare undesirable because they can alter the apparent currents being readfrom addressed memory elements, thereby making it difficult toaccurately read the states of addressed (selected) memory elements.Leakage currents are also undesirable because they add to the overallpower draw by an array and therefore undesirably causes the power supplyto have to be made larger than is desirable. Because of the relativelysmall extent of unaddressed memory elements that have voltages appliedduring programming and reading of addressed memory elements, the arraywith the three-dimensional architecture disclosed herein may be made toinclude a relatively large number of addressed memory elements withoutintroducing errors in reading and exceeding reasonable power supplycapabilities.

In addition, the three-dimensional architecture disclosed herein allowsvariable resistance memory elements to be connected at orthogonalcrossings of bit and word line conductors without the need for diodes orother non-linear elements being connected in series with the variableresistive elements. In existing arrays of variable resistance memoryelements, a diode is commonly connected in series with each memoryelement in order to reduce the leakage current though the element whenit is unselected but nevertheless has a voltage difference placed acrossit, such as can occur when the unselected memory element is connected toa bit or word line carrying voltages to selected memory elementsconnected to those same lines. The absence of the need for diodessignificantly reduces the complexity of the array and thus the number ofprocessing steps required to manufacture it. The terms connected andcoupled refers to direct and indirect connections/couplings.

Indeed, the manufacture of the three-dimensional array of memoryelements herein is much simpler than other three-dimensional arraysusing the same type of memory elements. In particular, a fewer number ofmasks is required to form the elements of each plane of the array. Thetotal number of processing steps needed to form integrated circuits withthe three-dimensional array are thus reduced, as is the cost of theresulting integrated circuit.

Referring initially to FIG. 1A, an architecture of one example of athree-dimensional memory 10 is schematically and generally illustratedin the form of a three-dimensional equivalent circuit of a portion ofsuch a memory. A standard three-dimensional rectangular coordinatesystem 11 is used for reference, the directions of each of vectors x, yand z being orthogonal with the other two. In another embodimentdirections x and y (e.g., of the word lines and serial strings of memorycells are substantially 60 degrees from each other.

A circuit for selectively connecting internal memory elements withexternal data circuits is preferably formed using select devices Qxydisposed in a selectors layer 14, where x gives a relative position ofthe device in the x-direction and y gives its relative position in they-direction. The individual select devices Qxy may be a select gate or aselect transistor, as examples. Global bit lines (GBLx) are alsoprovided in the selectors layer 14 and are elongated in the y-directionand have relative positions distributed in the x-direction where thelatter is indicated by the subscript. The global bit lines (GBLx) areindividually connectable with the input terminal (e.g., source or drain)of the select devices Qxy having the same position in the x-direction,although during reading and also typically during programming only oneselect device connected with a specific global bit line is turned on attime. The output terminal (the other of the source or drain) of theindividual select device Qxy is connected with one of the local bitlines (LBLxy). The local bit lines are elongated vertically, in thez-direction, and form a regular two-dimensional array in the x (row) andy (column) directions.

In order to connect one set or group (in this example, designated as onerow) of local bit lines with a corresponding global bit line, row selectlines SGy are elongated in the x-direction and connect with controlterminals (gates) of a corresponding group (e.g., a single row) ofselect devices Qxy (where those of a row may have a common position inthe y-direction). The select devices Qxy in one embodiment, thereforeconnect one row of local bit lines (LBLxy) across the x-direction(having the same position in the y-direction) at a time to correspondingones of the global bit-lines (GBLx), depending upon which of the rowselect lines SGy receives a voltage that turns on the select devices towhich it is connected. The remaining row select lines receive voltagesthat keep their connected select devices Qxy off. It may be noted thatsince only one select device (Qxy) is used with each of the local bitlines (LBLxy), the pitch of the array across the semiconductor substratein both x and y-directions may be made very small, particularly if theselect devices Qxy are vertically oriented ones, and thus the density ofthe memory storage elements can be made relatively large.

Memory elements Mzxy are formed in a plurality of planes (also referredto here as layers) positioned at different distances in the z-directionabove the substrate 13. Two planes z=1 and z=2 are illustrated in FIG.1A but there will typically be more, such as 4, 6, 8, 16, 32, or evenmore such layers or planes. In each plane at distance z, word lines WLzyare elongated in the x-direction and spaced apart in the y-directionbetween the local bit-lines (LBLxy). The word lines WLzy of each planeindividually cross between adjacent ones of the local bit-lines LBLxysuch that there are two bit lines disposed respectively to the left andright of a given connection point or area of each word line. Theindividual memory storage elements Mzxy are connected between one localbit line LBLxy and one word line WLzy adjacent these individualcrossings. An individual memory element Mzxy is therefore addressable byplacing proper voltages on the local bit line LBLxy and word line WLzybetween which the memory element is connected. The voltages are chosento provide the electrical stimulus necessary to cause the state of thememory element to change from an existing state to the desired newstate. The levels, duration and other characteristics of these voltagesdepend upon the material(s) used for the memory elements.

Each “plane” of the three-dimensional memory structure is typicallyformed of at least two sublayers, one in which the conductive word linesWLzy are positioned and another in which there is included a dielectricmaterial that electrically isolates the planes from each other.Additional sublayers may also be present in each plane, depending forexample on the structure of the memory elements Mzxy. The planes arestacked on top of each other above a semiconductive substrate with thelocal bit lines LBLxy being connected with storage elements Mzxy of eachplane through which the local bit lines extend.

The memory arrays described herein, including memory 10, are examples ofmonolithic three dimensional memory structures. A monolithic threedimensional memory structure is one in which multiple memory levels areformed above (and not in) a single substrate, such as a wafer, with nointervening substrates and active areas of the memory are disposed abovethe substrate. The layers forming one memory level are deposited orgrown directly over the layers of an existing level or levels. Incontrast, stacked memories have been constructed by forming memorylevels on separate substrates and adhering the memory levels atop eachother, as in Leedy, U.S. Pat. No. 5,915,167, “Three DimensionalStructure Memory.” The substrates may be thinned or removed from thememory levels before bonding, but as the memory levels are initiallyformed over separate substrates, such memories are not true monolithicthree dimensional memory structures or monolithic three dimensionalmemory arrays.

FIG. 1B is an equivalent circuit of a portion of an exemplary secondthree-dimensional array of variable resistance memory elements, whereinthe array has vertically extending, pairs of local bit lines andhorizontally extending word lines. In order to avoid illustrativeclutter, not all of the components are shown distributed through thethree-dimensional structures. However, it is to be understood that manyof the basic concepts described for FIG. 1A apply here too. Selectordevices Qxy in layer 14′ determine which group (e.g., row) of local bitlines (LBL's) while connect to the y-direction extending, global bitlines GBLx. Word lines Wzy extend horizontally through the respectivememory cell planes (z=1, 2, . . . , N) and between the verticallyextending, local bit lines (LBL's). Unlike the case of FIG. 1A however,the local bit lines (LBL's) are provided as pairs and neither memorycells (Mzxy) nor word lines Wzy nor other electrical interconnectelements are disposed between the two local bit lines (e.g., LBL11 andLBL12) of each such pair of immediately adjacent but isolated from oneanother bit lines (where LBL13 and LBL14 is another example of such apair). The isolation of the immediately adjacent andisolated-from-one-another local bit lines, (e.g., LBL11 and LBL12) maycome in the form of a continuous insulative layer interposed betweenthose local bit lines, (e.g., LBL11 and LBL12) or in the form of an airgap between those local bit lines or as a combination of air pockets andinterposed insulative material in areas of the continuous isolationlayer not having air pockets.

Each memory cell of the embodiment of FIG. 1A still has first and secondoperation terminals that respectively connect to a connection point(WLcp) on a nearby word line Wzy and to a connection point (not labeled)on a nearby local bit line LBLxy. Unlike the case in FIG. 1A though, they-direction extending, serial strings of memory cells are notcontinuously connected one to the next. For every two memory cells(e.g., M112 and M113) connected to a respective word line connectionpoint (WLcp) there is a leakage current blocking gap formed at the leftend by a first pair of isolated-from-one-another local bit lines (e.g.,LBL11 and LBL12) and another leakage current blocking gap formed at theright end by a second pair of isolated-from-one-another local bit lines(e.g., LBL13 and LBL14). Accordingly, when respective first and secondcell-programming voltage levels (e.g., 0V and VPGM) are appliedrespectively to a selected word line (e.g., WL11—not shown, see insteadWL21) and a selected local bit line (e.g., LBL12), those appliedvoltages do not propagate through long serial strings of continuouslyconnected, one to the next, memory cells. Instead, the leakage currentblocking gaps formed by the pairs of isolated-from-one-another local bitlines (e.g., LBL13 and LBL14) prevent unchecked voltage propagations andthus limit the areas in which undesired leakage currents might flow. Asa consequence, measures taken to inhibit undesired leakage currents canbe restricted to smaller areas and power consumption may be reduced.This aspect will be better understood when a specific example is givenbelow.

Still referring to FIG. 1B, in one embodiment, not only are the localbit lines (LBL's) provided as pairs of immediately adjacent, butisolated-from-one-another local bit lines (e.g., LBL13 and LBL14), thecorresponding bit line selector devices Qxy in layer 14′ are provided aspairs of immediately adjacent, and at least partiallyisolated-from-one-another selector devices. More specifically, theoutput terminals (e.g., transistor drains) of adjacent bit line selectordevices such as Q13 and Q14 are isolated from one another while theinput terminals (e.g., transistor sources) of the pair may be joinedsuch that, as each bit line selector device (e.g., Q13 and Q14) is aloneturned on, it enjoys a relatively wide source region (input terminalregion) and thus a reduced source-to-drain resistance (RdsON). Moreover,the optionally integrally joined together input terminals (e.g.,transistor sources) of the pair of adjacent bit line selector devices(e.g., Q13 and Q14) may have a wider contact area with the correspondingglobal bit line (e.g., GBL1) and thus better contact reliability as wellas reduced contact resistance.

In view of the above description of FIG. 1B, a method of fabricating athree-dimensional memory array may comprise: forming a plurality ofglobal bit lines (GBL's) extending in a first direction; forming alongand in respective contact with each one of the GBL's a respectiveplurality of pairs of immediately adjacent, and at least partiallyisolated-from-one-another selector devices where each pair has anintegrated contact coupling input terminals of the pair to therespective GBL and optionally where the input terminals of the pair ofselector devices are joined and defined by a unitary structure; for eachpair of immediately adjacent, and at least partiallyisolated-from-one-another selector devices, forming a corresponding pairof immediately adjacent and isolated-from-one-another local bit lines(LBL's); forming a three-dimensional structure having memory cellsdistributed therein in a matrix format with the pairs of LBL's extendingvertically into the matrix of memory cells and with the pairs of LBL'seach being interposed between and thus defining a current conduction gapbetween respective first serial strings of plural memory cells connectedto one of the bit lines in the pair and respective second serial stringsof plural memory cells connected to the other of the bit lines in thepair; and forming a plurality of word lines (WL's) extendinghorizontally into the matrix and making contacts with operativeterminals of corresponding ones of the memory cells opposite to theterminals connected to by the bit lines (LBL's). A method of operatingsuch a three-dimensional memory array may comprise: applying respectivefirst and second voltages to respective first and second bit lines ofcorresponding pairs of immediately adjacent andisolated-from-one-another local bit lines (LBL's) that extend in onedirection into the three-dimensional memory array; applying respectiveother voltages to respective word lines that extend in a differentsecond direction into the three-dimensional memory array so as tothereby address a subset of the memory cells for performing at least oneof programming and reading the addressed subset of the memory cells.wherein the applied other voltages of the word lines are prevented frompropagating endlessly along serial strings of the memory cells byinterposed ones of the pairs of immediately adjacent andisolated-from-one-another local bit lines (LBL's).

Referring next to FIG. 2, shown is a block diagram of illustrativememory systems that can respectively use the three-dimensionallyorganized memories 10 and 10′ of FIGS. 1A and 1B respectively. Datainput-output circuits 21 are connected to the memory array 10/10′ so asto provide (during programming) and receive (during reading) analogelectrical quantities in parallel over the global bit-lines GBLx ofFIGS. 1A/1B that are representative of data stored in addressed memoryelements Mzxy. Data input-output circuits 21 typically contain senseamplifiers for converting sensed ones of these electrical quantities(e.g., voltages, currents) into digital data values during reading,which digital values are then conveyed over lines 23 to a memory systemcontroller 25. Conversely, data to be programmed into the array 10 aresent by the controller 25 to the input-output circuits 21, which thenprogram that data into addressed memory elements by placing properprogramming voltages (e.g., VPGM) on the global bit lines GBLx. Forbinary operation, one voltage level is typically placed on a global bitline to represent a binary “1” and another voltage level to represent abinary “0”. The memory elements are addressed for reading or programmingby further voltages placed on the word lines WLzy and on the row selectlines SGy by respective word line select circuits 27 and local bit lineselecting circuits 29. In the specific three-dimensional arrays of FIGS.1A/1B, the memory elements lying between a selected word line and any ofthe local bit lines LBLxy connected at one instance through the selectdevices Qxy to the global bit lines GBLx may be addressed forprogramming or reading by appropriate voltages being applied through theselect circuits 27 and 29.

Controller 25 typically receives data from and sends data to a hostsystem 31. Controller 25 usually contains an amount ofrandom-access-memory (RAM) 34 for temporarily storing such data andoperating information. Commands, status signals and addresses of databeing read or programmed are also exchanged between the controller 25and host 31. The memory system operates with a wide variety of hostsystems. The latter may include personal computers (PCs), laptop andother portable computers, cellular telephones, personal digitalassistants (PDAs), digital still cameras, digital movie cameras andportable audio players. The host typically includes a built-inreceptacle 33 for one or more types of memory cards or flash drives thataccepts a mating memory system plug 35 of the memory system but somehosts may require the use of adapters into which a memory card isplugged, and others may require the use of cables there between.Alternatively, the memory system may be built into the host system as anintegral part thereof.

Controller 25 conveys to decoder/driver circuits 37 commands receivedfrom the host 31. Similarly, status signals generated by the memorysystem are communicated to the controller 25 from decoder/drivercircuits 37. The circuits 37 can be simple logic circuits in the casewhere the controller controls nearly all of the memory operations, orcan include a sequential state machine to control at least some of therepetitive memory operations necessary to carry out given commands.Control signals resulting from decoding commands are applied from thecircuits 37 to the word line select circuits 27, local bit line selectcircuits 29 and data input-output circuits 21. Also connected to thecircuits 27 and 29 are address lines 39 from the controller that carryphysical addresses of memory elements to be accessed within the array10/10′ in order to carry out a command from the host. The physicaladdresses correspond to logical addresses received from the host system31, the conversion being made by the controller 25 and/or thedecoder/driver 37. As a result, the local bit line selecting circuits 29partially address the designated storage elements within the array10/10′ by placing proper voltages on the control elements of theselector devices Qxy to connect selected local bit lines (LBLxy) withthe global bit lines (GBLx). The addressing is completed by the circuits27 applying proper voltages to the word lines WLzy of the array. In oneembodiment, any one or combination of Controller 25, decoder/drivercircuits 37, circuits 21, 27 and 29, or other control logic can bereferred to as one or more control circuits.

Although the memory system of FIG. 2 utilizes the three-dimensionalmemory arrays 10/10′ respectively depicted in FIGS. 1A and 1B, thesystem is not limited to use of only those array architectures. A givenmemory system may alternatively combine this type of memory with otheranother type including flash memory, such as flash memory having a NANDmemory cell array architecture, a magnetic disk drive or some other typeof memory. The other type of memory may have its own controller or mayin some cases share the controller 25 with the three-dimensional memorycell array 10/10′, particularly if there is some compatibility betweenthe two types of memory at an operational level.

Although each of the memory elements Mzxy in the respective arrays10/10′ of FIGS. 1A/1B may be individually addressed for changing itsstate according to incoming data or for reading its existing storagestate, it may be preferable to program and read the array in units ofmultiple memory elements in parallel. In the three-dimensional arrays ofFIGS. 1A/1B, one row of memory elements on one plane may be programmedand read in parallel. The number of memory elements operated in paralleldepends on the number of memory elements connected to the selected wordline. In some arrays, the word lines may be segmented (not shown in FIG.1A) so that only a portion of the total number of memory elementsconnected along their segment length may be addressed for paralleloperation, namely the memory elements connected to a selected one of thesegments. In some arrays the number of memory elements programmed in oneoperation may be less than the total number of memory elements connectedto the selected word line to minimize IR drops, to minimize power, orfor other reasons.

Previously programmed ones of the array memory elements whose data havebecome obsolete may be addressed and re-programmed to new statesdifferent from those which they were previously programmed to have. Thestates of the memory elements being re-programmed in parallel willtherefore most often have different starting states among them. This isacceptable for many memory element materials but it is usually preferredto re-set a group of memory elements to a common reference state beforethey are re-programmed. For this purpose, the memory elements may begrouped into blocks, where the memory elements of each block aresimultaneously reset to a common reference state, preferably one of thedistinct programmed states (e.g., a “1” or a “0”), in preparation forsubsequently programming them. If the memory element material being usedis characterized by changing from a first to a second state insignificantly less time than it takes to be changed from the secondstate back to the first state, then the reset operation is preferablychosen to cause the transition taking the longer time to be made. Thesubsequent programming can then be performed faster than the resettingto the common reference state. The longer reset time is usually not aproblem since resetting blocks of memory elements containing nothing butobsolete data is typically accomplished for a high percentage of casesin the background, therefore not adversely impacting the foregroundprogramming performance of the memory system.

With the use of block re-setting of memory elements, a three-dimensionalarray of variable resistive memory elements may be operated in a mannersimilar to flash memory arrays. Resetting a block of memory elements toa common reference state corresponds to erasing a block of flash memoryelements to an erased state. The individual blocks of memory elementsherein may be further divided into a plurality of pages of storageelements, wherein the memory elements of a page are programmed and readtogether. This is like the use of pages in flash memories. The memoryelements of an individual page are programmed and read together. Ofcourse, when programming, those memory elements that are to store datathat are represented by the reset state are not changed from the resetstate. Those of the memory elements of a page that need to be changed toanother state in order to represent the data being stored in them havetheir states changed by the programming operation.

An example of use of such blocks and pages is first illustrated withreference to FIG. 3A, which provides plan schematic views of planes z=1and z=2 of the array 10 of FIG. 1A. The different word lines WLzy thatextend across each of the planes and the local bit lines LBLxy thatextend up through the planes are shown within correspondingtwo-dimensional cross sections. Individual blocks are made up of memoryelements connected to both sides of one word line, or one segment of aword line if the word lines are segmented, in a single one of theplanes. There are therefore a very large number of such blocks in eachplane of the array. In the block illustrated in FIG. 3, each of thememory elements M114, M124, M134, M115, M125 and M135 (symbolized bycircles) connected to both sides of one word line WL12 form thecorresponding block of the exemplary WL12. Of course, there willgenerally be many more memory elements than shown connected along thelength of a word line. Only a few are illustrated for simplicity. Thememory elements of each block are connected between the single word lineand different ones of the local bit lines (LBL's) on both sides, namely,for the block illustrated in FIG. 3A, between the word line WL12 andrespective local bit lines LBL12, LBL22, LBL32, LBL13, LBL23 and LBL33.

A set of memory cells designated as a page is also illustrated in FIG.3A. In the specific embodiment being described, there are two pages perblock. One page is formed by the memory elements along one side of theword line (WL) of the block and the other page by the memory elementsalong the opposite side of the word line. The example page marked inFIG. 3A is formed by memory elements M114, M124 and M134. Of course, apage will typically have a very large number of memory elements in orderto be able to program and read a large amount of data at one time. Onlya few of the storage elements of the page of FIG. 3A are included, forsimplicity in explanation.

Example resetting, programming and reading operations of the memoryarray of FIGS. 1A and 3A, when operated as array 10 in the memory systemof FIG. 2, will now be described. For these examples, each of the memoryelements Mzxy is taken to include a non-volatile memory material thatcan be switched between two stable states of different resistance levelsby impressing voltages (or currents) of different polarity across thememory element, or voltages of the same polarity but differentmagnitudes and/or durations. For example, one class of material may beplaced into a high resistance state by passing current in one directionthrough the element, and into a low resistance state by passing currentin the other direction through the element. Or, in the case of switchingusing the same voltage polarity, one element may need a higher voltageand a shorter application time to switch to a high resistance state anda lower voltage and a longer time to switch to its lower resistancestate. These discrete states may constitute the binary memory states ofthe individual memory elements that indicate storage of one bit of data,which is either a “0” or a “1,” depending upon the memory element state.

In one embodiment, to reset (e.g., erase) a block of memory elements,the memory elements in that block are placed into their high resistancestates. This state will be designated as the logical data state “1,”following the convention used in current flash memory arrays but itcould alternatively be designated to be a “0.” As shown by the examplein FIG. 3A, a block includes all the memory elements that areelectrically connected to one word line WL or segment thereof. A blockis the smallest unit of memory elements in the array that are resettogether. It can include thousands of memory elements. If a row ofmemory elements on one side of a word line includes 1000 of them, forexample, a block will have 2000 memory elements from the two rowsdisposed on the sides of the word line.

The following steps may be taken to reset all the memory elements of ablock, using the block illustrated in FIG. 3A as an example:

-   -   1. Set all of the global bit lines (GBL₁, GBL₂ and GBL₃ in the        array of FIGS. 1A and 3A) to zero volts (0V), by the circuits 21        of FIG. 2.    -   2. Set at least the two row select lines (SG's) on either side        of the one word line of the block to H′ volts (high), so that        the local bit lines on each side of the word line in the        y-direction are connected to their respective global bit lines        through their select devices and therefore brought to zero        volts. The voltage H′ is made high enough to turn on the select        devices Q_(xy), for example, something in a range of 1-6 volts,        typically 3 volts. The exemplary block shown in FIG. 3A includes        the word line WL₁₂, so the row select lines SG₂ and SG₃ (FIG.        1A) on either side of that word line are set to H′ volts, by the        circuits 29 of FIG. 2, in order to turn on the select devices        Q₁₂, Q₂₂, Q₃₂, Q₁₃, Q₂₃ and Q₃₃. This causes each of the local        bit lines LBL₁₂, LBL₂₂, LBL₃₂, LBL₁₃, LBL₂₃ and LBL₃₃ in two        adjacent rows extending in the x-direction to be connected to        respective ones of the global bit lines GBL1, GBL2 and GBL3 and        to propagate the applied 0V levels. Two of the local bit lines        adjacent to each other in the y-direction are connected to a        respective single global bit line (e.g., GBL₁). Those local bit        lines along GBL₁ (as an example) are then set to the zero volts        while the remaining local bit lines along GBL₁ (as an example)        preferably remain unconnected to that respective global bit line        (e.g., GBL₁) and with their voltages thus floating.    -   3. Set the word line of the block being reset to H volts. This        reset voltage value is dependent on the switching material in        the memory element and can be between a fraction of a volt to a        few volts. All other word lines of the array, including the        other word lines of selected plane 1 and all the word lines on        the other unselected planes, are set to zero volts. In the array        of FIGS. 1A and 3A, word line WL₁₂ is placed at H volts, while        all other word lines in the array are placed at zero volts, all        by the circuits 27 of FIG. 2.

The result is that H volts are placed across each of the memory elementsof the block. In the example block of FIG. 3A, this includes the memoryelements M114, M124, M134, M115, M125 and M135. For the type of memorymaterial being used as an example, the resulting currents through thesememory elements places any of them not already in a high resistancestate, into that re-set state.

It may be noted that no stray currents will flow during such a blockreset because only one word line has a non-zero voltage. The voltage onthe one word line of the block can cause current to flow to ground onlythrough the memory elements of the block. There is also nothing that candrive any of the unselected and electrically floating local bit lines toH volts, so no voltage difference will exist across any of the othermemory elements of the array outside of the block. Therefore no voltagesare applied across unselected memory elements in other blocks that cancause them to be inadvertently disturbed or reset.

It may also be noted that multiple blocks may be concurrently reset bysetting any combination of word lines and the adjacent select gates to Hor H′ respectively. In this case, the only penalty for doing so is anincrease in the amount of current that is required to simultaneouslyreset an increased number of memory elements. This affects the size ofthe power supply that is required. In some embodiments, less than allmemory elements of a block will be simultaneously reset.

The memory elements of a page are preferably programmed concurrently, inorder to increase the parallelism of the memory system operation. Anexpanded version of the page indicated in FIG. 3A is provided in FIG. 4,with annotations added to illustrate a programming operation. Theindividual memory elements of the page are initially in their resetstate because all the memory elements of its block have previously beenreset. The reset state is taken herein to represent a logical data “1.”For any of these memory elements to store a logical data “0” inaccordance with incoming data being programmed into the page, thosememory elements need to be switched into their low resistance state(their set state), while the remaining memory elements of the pageremain in the previously attained reset state.

For programming a page, only one row of select devices (e.g., those ofSG2) is turned on, resulting in only one row of local bit lines beingconnected to their respective global bit lines. This connectionalternatively allows the memory elements of both pages of the block tobe programmed in two sequential programming cycles, which then makes thenumber of memory elements in the reset and programming units equal.

Referring to FIGS. 3A and 4, an example programming operation within theindicated one page of memory elements M114, M124 and M134 is described,as follows:

-   -   1. The voltages placed on the global bit lines are in accordance        with the pattern of data received by the memory system for        programming. In the example of FIG. 4, GBL₁ carries logical data        bit “1”, GBL₂ the logical bit “0” and GBL3 the logical bit “1.”        Gate line SG₂ is activated so that the bit lines are set        respectively to corresponding voltages M, H and M, as shown,        where the M level voltage is high but not sufficient to program        a memory element and the H level is high enough to force a        memory element into the programmed state. The M level voltage        may be about one-half of the H level voltage, between zero volts        and H. For example, a M level can be 0.7 volt, and a H level can        be 1.5 volt. The H level used for programming is not necessary        the same as the H level used for resetting or reading. In this        case, according to the received data, memory elements M₁₁₄ and        M₁₃₄ are to remain in their reset state, while memory element        M₁₂₄ is being programmed. Therefore, the programming voltages        are applied only to memory element M₁₂₄ of this page by the        following steps.    -   2. Set the word line of the page being programmed to 0 volts, in        this case selected word line WL₁₂. This is the only word line to        which the memory elements of the page are connected. Each of the        other word lines on all planes is set to the M level. These word        line voltages are applied by the circuits 27 of FIG. 2.    -   3. As indicated above, after the desired levels on the GBL's        settle, the process sets one of the row select lines below and        on either side of the selected word line to the H′ voltage        level, in order to select a page for programming. For the page        indicated in FIGS. 3A and 4, the H′ voltage is placed on row        select line SG₂ in order to turn on select devices Q₁₂, Q₂₂ and        Q₃₂ (FIG. 1). All other row select lines, namely lines SG₁ and        SG₃ in this example, are set to 0 volts in order to keep their        bit line selector devices turned off. The row select line        voltages are applied by the circuits 29 of FIG. 2. This connects        one row of local bit lines to the global bit lines and leaves        all other local bit lines floating. In this example, the row of        local bit lines LBL₁₂, LBL₂₂ and LBL₃₂ are connected to the        respective global bit lines GBL₁, GBL₂ and GBL₃ through the        select devices that are turned on, while all other local bit        lines (LBLs) of the array are left floating.

The result of this operation, for the example memory element materialmentioned above, is that a programming current IPROG is sent through thememory element M124, thereby causing that memory element to change froma reset state to a set (programmed) state. The same will occur withother memory elements (not shown) that are connected between theselected word line WL12 and a local bit line (LBL) that has theprogramming voltage level H applied. (The possible flows of undesiredparasitic currents as opposed to desired programming currents IPROG willbe discussed shortly.)

An example of the relative timing of applying the above-listedprogramming voltages is to initially set all the global bit lines(GBLs), the selected row select line (SG), the selected word line andtwo adjacent word lines on either side of the selected word line on theone page all to the voltage level M. After this, selected ones of theGBLs are raised to the voltage level H according to the data beingprogrammed while simultaneously dropping the voltage of the selectedword line to 0 volts for the duration of the programming cycle. The wordlines in plane 1 other than the selected word line WL12 and all wordlines in the unselected other planes can be weakly driven to M, somelower voltage or allowed to float in order to reduce power that must bedelivered by word line drivers that are part of the circuits 27 of FIG.2.

By floating all the local bit lines other than the selected row (in thisexample, all but LBL12, LBL22 and LBL32), voltages can be looselycoupled to outer word lines of the selected plane 1 and word lines ofother planes that are allowed to float through memory elements in theirlow resistance state (programmed) that are connected between thefloating local bit lines and adjacent word lines. These outer word linesof the selected plane and word lines in unselected planes, althoughallowed to float, may eventually be driven up to voltage level M througha combination of programmed memory elements.

Because series and parallel networks of resistive elements (memorycells) and conductors are present in the embodiment of FIG. 3A, thereare typically parasitic currents present during the programmingoperation that can increase the currents that must be supplied throughthe selected word line and global bit lines. During programming thereare at least two sources of parasitic currents, one to the adjacent pagein a different block and another to the adjacent page in the same block.An example of the first is the parasitic current IP1 shown on FIG. 4from the local bit line LBL22 that has been raised to the voltage levelH during programming. The memory element M123 is connected between thatvoltage and the voltage level M on its word line WL11. This voltagedifference can cause the parasitic current −IP1 to flow. Since there isno such voltage difference between the local bit lines LBL12 or LBL32and the word line WL11, no such parasitic current flows through eitherof the memory elements M113 or M133, a result of these memory elementsremaining in the reset state according to the data being programmed.

Other parasitic currents can similarly flow from the same local bit lineLBL22 to an adjacent word line in other planes. The presence of thesecurrents may limit the number of planes that can be included in thememory system since the total current may increase with the number ofplanes. The limitation for programming is in the current capacity of thememory power supply, so the maximum number of planes is a tradeoffbetween the size of the power supply and the number of planes. A numberof 4-16 planes may generally be used in most cases, but a differentamount can also be used.

The other mentioned source of parasitic currents during programming isto an adjacent page in the same block. The local bit lines that are leftfloating (all but those connected to the row of memory elements beingprogrammed) will tend to be driven to the voltage level M of unselectedword lines through any programmed memory element on any plane. This inturn can cause parasitic currents to flow in the selected plane fromthese local bit lines at the M voltage level to the selected word linethat is at zero volts. An example of this is given by the currents IP2,IP3 and IP4 shown in FIG. 4. In general, these currents will be muchless than the other parasitic current IP1 discussed above, since thesecurrents flow only through those memory elements in their conductivestate that are adjacent to the selected word line in the selected plane.

The above-described programming techniques ensure that the selected pageis programmed (local bit lines at H, selected word line at 0) and thatadjacent unselected word lines are at M. As mentioned earlier, otherunselected word lines can be weakly driven to M or initially driven to Mand then left floating. Alternately, word lines in any plane distantfrom the selected word line (for example, more than 5 word lines away)can also be left uncharged (at ground) or floating because the parasiticcurrents flowing to them are so low as to be negligible compared to theidentified parasitic currents since they must flow through a seriescombination of five or more ON devices (devices in their low resistancestate). This can reduce the power dissipation caused by charging a largenumber of word lines.

While the above description assumes that each memory element of the pagebeing programmed will reach its desired ON value with one application ofa programming pulse, a program-verify technique commonly used in NOR orNAND flash memory technology may alternately be used. In this process, acomplete programming operation for a given page includes of a series ofindividual programming operations in which a smaller change in ONresistance occurs within each program operation. Interspersed betweeneach program operation is a verify (read) operation that determineswhether an individual memory element has reached its desired programmedlevel of resistance or conductance consistent with the data beingprogrammed in the memory element. The sequence of program/verify isterminated for each memory element as it is verified to reach thedesired value of resistance or conductance. After all of memory elementsbeing programmed are verified to have reached their desired programmedvalue, programming of the page of memory elements is then completed. Anexample of this technique is described in U.S. Pat. No. 5,172,338.

Referring to the configuration of FIG. 3B, where the latter correspondswith that of FIG. 1B, here pairs of immediately adjacent andisolated-from-one-another local bit lines (LBL's) bound each block. As aresult, the extents of parallel/series resistive networks are reduced.Parasitic currents such as Ip1 of FIG. 4 cannot flow because theexemplary LBL22 of FIG. 4 is replaced in FIG. 3B by a pair ofimmediately adjacent and isolated-from-one-another local bit lines(LBL's). The resistive network bounding effect of using immediatelyadjacent and isolated-from-one-another local bit lines (LBL's) is notjust present within a single plane (e.g., Plane z=1 of FIG. 3B) butrather extends vertically up the planes because the same adjacent andisolated-from-one-another local bit lines (LBL's) shown in Plane z=1 ofFIG. 3B reappear in Plane z=2 and yet higher planes (not shown). In oneembodiment, two independently driven, row select lines such SG1 and SG2shown in FIG. 3B are used for the corresponding two bit lines of eachrow of pair of immediately adjacent and isolated-from-one-another localbit lines (LBL's). In one embodiment, the two independently driven, rowselect lines such SG1 and SG2 shown in FIG. 3B are respectively drivenfrom one of opposed sides of the substrate so that contacts to theadjacent row select lines (such SG1 and SG2) shown in FIG. 3B are notcrowded together. More specifically, the driving circuit contact for SG1may be on the left side of FIG. 3B while the driving circuit contact forSG2 may be on the right side.

Referring next and primarily to FIG. 5, the parallel reading of thestates of a page of memory elements, such as the memory elements M114,M124 and M134 of FIG. 3A is described. The steps of an example readingprocess are as follows:

-   -   1. Set all the global bit lines GBLs and all the word lines WL        to a predetermined reference voltage V_(R). The voltage V_(R) is        simply a convenient reference voltage and can be any number of        values but will typically be between 0 and 1 volt. In general,        for operating modes where repeated reads occur, it is convenient        to set all word lines in the array to V_(R) in order to reduce        parasitic read currents, even though this requires charging all        the word lines. However, as an alternative, it is only necessary        to raise the selected word line (WL₁₂ in FIG. 5), the word line        in each of the other planes that is in the same position as the        selected word line and the immediately adjacent word lines in        all planes to V_(R).    -   2. Turn on one row of bit line selector devices by placing a        voltage on the control line adjacent to the selected word line        (e.g., SG₂) in order to define the page to be read. In the        example of FIGS. 1A, 3A and 5, a voltage is applied to the row        select line SG₂ in order to turn on the select devices Q₁₂, Q₂₂        and Q₃₂. This connects one row of local bit lines LBL₁₂, LBL₂₂        and LBL₃₂ to their respective global bit lines GBL₁, GBL₂ and        GBL₃. These local bit lines are then connected to individual        sense amplifiers (SA) that are present in the circuits 21 of        FIG. 2, and assume the potential V_(R) of the global bit lines        to which they are connected. All other local bit lines LBLs are        allowed to float.    -   3. Set the selected word line (WL₁₂) to a voltage of        V_(R)±Vsense. The sign of Vsense is chosen based on the sense        amplifier and in one embodiment, has a magnitude of about 0.5        volt. The voltages on all other word lines remain at V_(R).    -   4. Sense the current flowing into (V_(R)+Vsense) or out of        (V_(R)−Vsense) each sense amplifier for a predetermined time T.        These are the currents IR₁, IR₂ and IR₃ shown to be flowing        through the addressed memory elements of the example of FIG. 5,        which are proportional to the programmed states of the        respective memory elements M₁₁₄, M₁₂₄ and M₁₃₄. Integration over        time may be used by the sense amplifiers. The states of the        memory elements M₁₁₄, M₁₂₄ and M₁₃₄ are then given by binary        outputs of the sense amplifiers within the circuits 21 that are        connected to the respective global bit lines GBL₁, GBL₂ and        GBL₃. These sense amplifier outputs are then sent over the lines        23 (FIG. 2) to the controller 25, which then provides the read        data to the host 31.    -   5. Turn off the selector devices (Q₁₂, Q₂₂ and Q₃₂) by removing        the voltage from the row select line (SG₂), in order to        disconnect the local bit lines from the global bit lines, and        return the selected word line (WL₁₂) to the voltage V_(R).

In the case of reading using the configuration of FIG. 5 (and of FIGS.1A and 3A) parasitic currents may flow during such read operations andmay present two undesirable effects. As with programming, parasiticcurrents place increased demands on the memory system power supply. Inaddition, it is possible for parasitic currents to exist that areerroneously included in the currents passed through the addressed memoryelements that are being read. This can therefore lead to erroneous readresults if such parasitic currents are large enough.

As in the programming case, all of the local bit lines except theselected row (LBL12, LBL22 and LBL32 in the example of FIG. 5) arefloating. But the potential of the floating local bit lines may bedriven to VR by any memory element that is in its programmed (lowresistance) state and connected between a floating local bit line and aword line at VR, in any plane. A parasitic current comparable to IP1 inthe programming case (FIG. 4) is not present during data read becauseboth the selected local bit lines and the adjacent non-selected wordlines are both at VR. Parasitic currents may flow, however, through lowresistance memory elements connected between floating local bit linesand the selected word line. These are comparable to the currents IP2,IP3, and IP4 during programming (FIG. 4), indicated as IP5, IP6 and IP7in FIG. 5. Each of these currents can be equal in magnitude to themaximum read current through an addressed memory element. However, theseparasitic currents are flowing from the word lines at the voltage VR tothe selected word line at a voltage VR±Vsense without flowing throughthe sense amplifiers. These parasitic currents will not flow through theselected local bit lines (LBL12, LBL22 and LBL32 in FIG. 5) to which thesense amplifiers are connected. Although they contribute to powerdissipation, these parasitic currents generally do not thereforeintroduce a sensing error.

Although the neighboring word lines should be at VR to minimizeparasitic currents, as in the programming case it may be desirable toweakly drive these word lines or even allow them to float. In onevariation, the selected word line and the neighboring word lines can bepre-charged to VR and then allowed to float. When the sense amplifier isenergized, it may charge them to VR so that the potential on these linesis accurately set by the reference voltage from the sense amplifier (asopposed to the reference voltage from the word line driver). This canoccur before the selected word line is changed to VR±Vsense but thesense amplifier current is not measured until this charging transient iscompleted.

Reference cells may also be included within the memory array 10 tofacilitate any or all of the common data operations (erase, program, orread). A reference cell is a cell that is structurally as nearlyidentical to a data cell as possible in which the resistance is set to aparticular value. They are useful to cancel or track resistance drift ofdata cells associated with temperature, process non-uniformities,repeated programming, time or other cell properties that may vary duringoperation of the memory. Typically they are set to have a resistanceabove the highest acceptable low resistance value of a memory element inone data state (such as the ON resistance) and below the lowestacceptable high resistance value of a memory element in another datastate (such as the OFF resistance). Reference cells may be “global” to aplane or the entire array, or may be contained within each block orpage.

In one embodiment, multiple reference cells may be contained within eachpage. The number of such cells may be only a few (less than 10), or maybe up to a several percent of the total number of cells within eachpage. In this case, the reference cells are typically reset and writtenin a separate operation independent of the data within the page. Forexample, they may be set one time in the factory, or they may be setonce or multiple times during operation of the memory array. During areset operation described above, all of the global bit lines are setlow, but this can be modified to only set the global bit linesassociated with the memory elements being reset to a low value while theglobal bit lines associated with the reference cells are set to anintermediate value, thus inhibiting them from being reset. Alternately,to reset reference cells within a given block, the global bit linesassociated with the reference cells are set to a low value while theglobal bit lines associated with the data cells are set to anintermediate value. During programming, this process is reversed and theglobal bit lines associated with the reference cells are raised to ahigh value to set the reference cells to a desired ON resistance whilethe memory elements remain in the reset state. Typically the programmingvoltages or times will be changed to program reference cells to a higherON resistance than when programming memory elements.

If, for example, the number of reference cells in each page is chosen tobe 1% of the number of data storage memory elements, then they may bephysically arranged along each word line such that each reference cellis separated from its neighbor by 100 data cells, and the senseamplifier associated with reading the reference cell can share itsreference information with the intervening sense amplifiers readingdata. Reference cells can be used during programming to ensure the datais programmed with sufficient margin. Further information regarding theuse of reference cells within a page can be found in U.S. Pat. Nos.6,222,762, 6,538,922, 6,678,192 and 7,237,074.

In a particular embodiment, reference cells may be used to approximatelycancel parasitic currents in the array. In this case the value of theresistance of the reference cell(s) is set to that of the reset staterather than a value between the reset state and a data state asdescribed earlier. The current in each reference cell can be measured byits associated sense amplifier and this current subtracted fromneighboring data cells. In this case, the reference cell isapproximating the parasitic currents flowing in a region of the memoryarray that tracks and is similar to the parasitic currents flowing inthat region of the array during a data operation. This correction can beapplied in a two step operation (measure the parasitic current in thereference cells and subsequently subtract its value from that obtainedduring a data operation) or simultaneously with the data operation. Oneway in which simultaneous operation is possible is to use the referencecell to adjust the timing or reference levels of the adjacent data senseamplifiers. An example of this is shown in U.S. Pat. No. 7,324,393.

In conventional two-dimensional arrays of variable resistance memoryelements, a diode is usually included in series with the memory elementbetween the crossing bit and word lines. The primary purpose of thediodes is to reduce the number and magnitudes of parasitic currentsduring resetting (erasing), programming and reading the memory elements.A significant advantage of the three-dimensional array herein is thatresulting parasitic currents are fewer and therefore have a reducednegative effect on operation of the array than in other types of arrays.

Diodes may also be connected in series with the individual memoryelements of the three-dimensional array, as currently done in otherarrays of variable resistive memory elements, in order to reduce furtherthe number of parasitic currents but there are disadvantages in doingso. Primarily, the manufacturing process becomes more complicated. Addedmasks and added manufacturing steps are then necessary. Also, sinceformation of the silicon p-n diodes often requires at least one hightemperature step, the word lines and local bit lines cannot then be madeof metal having a low melting point, such as aluminum that is commonlyused in integrated circuit manufacturing, because it may melt during thesubsequent high temperature step. Use of a metal, or composite materialincluding a metal, is preferred because of its higher conductivity thanthe conductively doped polysilicon material that is typically used forlocal bit lines and word lines because of being exposed to such hightemperatures. An example of an array of resistive switching memoryelements having a diode formed as part of the individual memory elementsis given in patent application publication no. US 2009/0001344 A1.

Because of the reduced number of parasitic currents in thethree-dimensional arrays disclosed herein, the total magnitude ofparasitic currents can be managed without the inclusion of such diodes.In addition to the simpler manufacturing processes, the absence of thediodes allows bi-polar operation; that is, an operation in which thevoltage polarity to switch the memory element from its first state toits second memory state is opposite of the voltage polarity to switchthe memory element from its second to its first memory state. Theadvantage of the bi-polar operation over a unipolar operation (samepolarity voltage is used to switch the memory element from its first tosecond memory state as from its second to first memory state) is thereduction of power to switch the memory element and an improvement inthe reliability of the memory element. These advantages of the bi-polaroperation are seen in memory elements in which formation and destructionof a conductive filament is the physical mechanism for switching, as inthe memory elements made from metal oxides and solid electrolytematerials. For these reasons, the embodiments discussed below utilizememory elements that include resistance switching material and do notinclude a diode or other separate steering device. The use of memoryelements that have a non-linear current vs voltage relationship are alsoenvisioned. For example as the voltage across a HfO based memory element(Hafnium Oxide) is reduced from the programming voltage to one half theprogramming voltage the current is reduced by a factor of 5 or evenmore. In such an embodiment the total magnitude of parasitic currentscan be managed without the use of diodes in the array.

The level of parasitic currents increases with the number of planes andwith the number of memory elements connected along the individual wordlines within each plane. The increase in parasitic currents increasesonly slightly with additional planes because the selected word line ison only one plane such as WL12 in FIG. 4. Parasitic currents Ip1, Ip2,Ip3, and Ip4 are all on the plane that contains WL12. Leakage currentson other planes are less significant because the floating lines tend tominimize currents on elements not directly connected to the selectedword line. Also since the number of unselected word lines on each planedoes not significantly affect the amount of parasitic current, theplanes may individually include a large number of word lines. Theparasitic currents resulting from a large number of memory elementsconnected along the length of individual word lines can further bemanaged by segmenting the word lines into sections of fewer numbers ofmemory elements. Erasing, programming and reading operations are thenperformed on the memory elements connected along one segment of eachword line instead of the total number of memory elements connected alongthe entire length of the word line.

The re-programmable non-volatile memory arrays described hereinrespectively have a number of advantages. The quantity of digital datathat may be stored per unit of semiconductive substrate area is high. Itmay be manufactured with a lower cost per stored bit of data. Only a fewmasks may be required for patterning the entire stack of planes, ratherthan requiring a separate set of masks for each plane. The number oflocal bit line connections with the substrate is significantly reducedover other multi-plane structures that do not use the vertical local bitlines. The architecture eliminates the need for each memory element tohave a diode in series with the resistive memory element, therebyfurther simplifying the manufacturing process and enabling the use ofmetal conductive lines. Also, the voltages necessary to operate thearray are much lower than those used in current commercial flashmemories.

Since at least one-half of each current flow path is vertical, thevoltage drops present in large cross-point arrays are significantlyreduced. The reduced length of the current path due to the shortervertical component means that there are approximately one-half thenumber memory elements on each current path and thus the leakagecurrents are reduced as is the number of unselected memory elementsdisturbed during a data programming or read operation. For example, ifthere are N cells associated with a word line and N cells associatedwith a bit line of equal length in a conventional array, there are 2Ncells associated or “touched” with every data operation. In the verticallocal bit lines architecture described herein, there are n cellsassociated with the bit line (n is the number of planes and is typicallya small number such as 4 to 16), or N+n cells are associated with a dataoperation. For a large N this means that the number of cells affected bya data operation is approximately one-half as many as in a conventionalthree-dimensional array.

The material(s) used for forming the non-volatile memory elements Mzxyin the respective arrays 10/10′ of FIGS. 1A/1B can be a chalcogenide, ametal oxide (MeOx), CMO, or any one of a number of materials thatexhibit a stable, reversible shift in resistance in response to anexternal voltage applied to or current passed through the material.

Metal oxides (MeOx) are characterized by being insulating when initiallydeposited. One suitable metal oxide is a titanium oxide (TiOx) in whichnear-stoichiometric TiO2 bulk material is altered in an annealingprocess to create an oxygen deficient layer (or a layer with oxygenvacancies) in proximity of the bottom electrode. The top platinumelectrode for memory storage element comprising TiOx, with its high workfunction, creates a high potential Pt/TiO2 barrier for electrons. As aresult, at moderate voltages (below one volt), a very low current willflow through the structure. The bottom Pt/TiO2-x barrier is lowered bythe presence of the oxygen vacancies (O+2) and behaves as a lowresistance contact (ohmic contact). (The oxygen vacancies in TiO2 areknown to act as n-type dopant, transforming the insulating oxide in anelectrically conductive doped semiconductor.) The resulting compositestructure is in a non-conductive (high resistance) state.

But when a large negative voltage (such as 1.5 volt) is applied acrossthe structure, the oxygen vacancies drift toward the top electrode and,as a result, the potential barrier Pt/TiO2 is reduced and a relativelyhigh current can flow through the structure. The device is then in itslow resistance (higher conduction) state. Experiments reported by othershave shown that conduction is occurring in filament-like regions of theTiO2, perhaps along grain boundaries.

The conductive path is broken by applying a large positive voltageacross the structure. Under this positive bias, the oxygen vacanciesmove away from the proximity of the top Pt/TiO2 barrier, and “break” thepostulated conduction filaments. The device returns to its highresistance state. Both of the conductive and non-conductive states arenon-volatile. Sensing the conduction of the memory storage element byapplying a voltage around 0.5 volts can easily determine the state ofthe memory element.

While this specific conduction mechanism may not apply to all metaloxides, as a group, they have a similar behavior: transition from a lowconductive state to a high conductive occurs state when appropriatevoltages are applied, and the two states are non-volatile. Examples ofother materials that can be used for the non-volatile memory elementsMzxy in the arrays of FIGS. 1A/1B include HfOx, ZrOx, WOx, NiOx, CoOx,CoalOx, MnOx, ZnMn2O4, ZnOx, TaOx, NbOx, HfSiOx, HfAlOx. Suitable topelectrodes include metals with a high work function (typically >4.5 eV)capable to getter oxygen in contact with the metal oxide to createoxygen vacancies at the contact. Some examples are TaCN, TiCN, Ru, RuO,Pt, Ti rich TiOx, TiAlN, TaAlN, TiSiN, TaSiN, IrO2 and dopedpolysilicon. Suitable materials for the bottom electrode are anyconducting oxygen rich material such as Ti(O)N, Ta(O)N, TiN and TaN. Thethicknesses of the electrodes are typically 1 nm or greater. Thicknessesof the metal oxide are generally in the range of 2 nm to 20 nm.

One example non-volatile memory element uses Hafnium Oxide (e.g., HfO2)as a reversible resistance-switching material, and positions thereversible resistance-switching material between two electrodes (memorycell terminals). A first electrode is positioned between reversibleresistance-switching material and a first conductor (e.g. bit line orword line). In one embodiment, the first electrode is made of platinum.The second electrode is positioned between reversibleresistance-switching material a second conductor (e.g., local bit lineor word line). In one embodiment, the second electrode is made ofTitanium Nitride, and serves as a barrier layer. In another embodiment,the second electrode is n+ doped polysilicon and the first electrode isTitanium Nitride. Other materials can also be used. The technologiesdescribed below are not restricted to any one set of materials forforming the non-volatile memory elements.

In another embodiment, the memory storage element will include HafniumOxide (or different metal oxide or different material) as the reversibleresistance-switching material, without any electrodes being positionedbetween the reversible resistance-switching material and the conductors(e.g., local bit lines and/or word lines). In other words, directcontact is made to the active material of the memory cell.

Another class of materials suitable for the memory storage elements issolid electrolytes but since they are electrically conductive whendeposited, individual memory elements need to be formed and isolated onefrom the next. Solid electrolytes are somewhat similar to the metaloxides, and the conduction mechanism is assumed to be the formation of ametallic filament between the top and bottom electrode. In thisstructure the filament is formed by dissolving ions from one electrode(the oxidizable electrode) into the body of the cell (the solidelectrolyte). In one example, the solid electrolyte contains silver ionsor copper ions, and the oxidizable electrode is preferably a metalintercalated in a transition metal sulfide or selenide material such asAx(MB2)1-x, where A is Ag or Cu, B is S or Se, and M is a transitionmetal such as Ta, V, or Ti, and x ranges from about 0.1 to about 0.7.Such a composition minimizes oxidizing unwanted material into the solidelectrolyte. One example of such a composition is Agx(TaS2)1-x.Alternate composition materials include α-AgI. The other electrode (theindifferent or neutral electrode) should be a good electrical conductorwhile remaining insoluble in the solid electrolyte material. Examplesinclude metals and compounds such as W, Ni, Mo, Pt, metal silicides, andthe like.

Examples of solid electrolytes materials are: TaO, GeSe or GeS. Othersystems suitable for use as solid electrolyte cells are: Cu/TaO/W,Ag/GeSe/W, Cu/GeSe/W, Cu/GeS/W, and Ag/GeS/W, where the first materialis the oxidizable electrode, the middle material is the solidelectrolyte, and the third material is the indifferent (neutral)electrode. Typical thicknesses of the solid electrolyte are between 30nm and 100 nm.

In recent years, carbon has been extensively studied as a non-volatilememory material. As a non-volatile memory element, carbon is usuallyused in two forms, conductive (or graphene like-carbon) and insulating(or amorphous carbon). The difference in the two types of carbonmaterial is the content of the carbon chemical bonds, so called sp2 andsp3 hybridizations. In the sp3 configuration, the carbon valenceelectrons are kept in strong covalent bonds and as a result the sp3hybridization is non-conductive. Carbon films in which the sp3configuration dominates, are commonly referred to astetrahedral-amorphous carbon, or diamond like. In the sp2 configuration,not all the carbon valence electrons are kept in covalent bonds. Theweak tight electrons (phi bonds) contribute to the electrical conductionmaking the mostly sp2 configuration a conductive carbon material. Theoperation of the carbon resistive switching nonvolatile memories isbased on the fact that it is possible to transform the sp3 configurationto the sp2 configuration by applying appropriate current (or voltage)pulses to the carbon structure. For example, when a very short (1-5 ns)high amplitude voltage pulse is applied across the material, theconductance is greatly reduced as the material sp2 changes into an sp3form (“reset” state). It has been theorized that the high localtemperatures generated by this pulse causes disorder in the material andif the pulse is very short, the carbon “quenches” in an amorphous state(sp3 hybridization). On the other hand, when in the reset state,applying a lower voltage for a longer time (˜300 nsec) causes part ofthe material to change into the sp2 form (“set” state). The carbonresistance switching non-volatile memory elements have a capacitor likeconfiguration where the top and bottom electrodes are made of hightemperature melting point metals like W, Pd, Pt and TaN.

There has been significant attention recently to the application ofcarbon nanotubes (CNTs) as a non-volatile memory material. A (singlewalled) carbon nanotube is a hollow cylinder of carbon, typically arolled and self-closing sheet one carbon atom thick, with a typicaldiameter of about 1-2 nm and a length hundreds of times greater. Suchnanotubes can demonstrate very high conductivity, and various proposalshave been made regarding compatibility with integrated circuitfabrication. It has been proposed to encapsulate “short” CNT's within aninert binder matrix to form a fabric of CNT's. These can be deposited ona silicon wafer using a spin-on or spray coating, and as applied theCNT's have a random orientation with respect to each other. When anelectric field is applied across this fabric, the CNT's tend to flex oralign themselves such that the conductivity of the fabric is changed. Asin the other carbon based resistive switching non-volatile memories, theCNT based memories have capacitor-like configurations with top andbottom electrodes made of high melting point metals such as thosementioned above.

Yet another class of materials suitable for the memory storage elementsis phase-change materials. A preferred group of phase-change materialsincludes chalcogenide glasses, often of a composition GexSbyTez, wherepreferably x=2, y=2 and z=5. GeSb has also been found to be useful.Other materials include AgInSbTe, GeTe, GaSb, BaSbTe, InSbTe and variousother combinations of these basic elements. Thicknesses are generally inthe range of 1 nm to 500 nm. The generally accepted explanation for theswitching mechanism is that when a high energy pulse is applied for avery short time to cause a region of the material to melt, the material“quenches” in an amorphous state, which is a low conductive state. Whena lower energy pulse is applied for a longer time such that thetemperature remains above the crystallization temperature but below themelting temperature, the material crystallizes to form poly-crystalphases of high conductivity. These devices are often fabricated usingsub-lithographic pillars, integrated with heater electrodes. Often thelocalized region undergoing the phase change may be designed tocorrespond to a transition over a step edge, or a region where thematerial crosses over a slot etched in a low thermal conductivitymaterial. The contacting electrodes may be any high melting metal suchas TiN, W, WN and TaN in thicknesses from 1 nm to 500 nm.

It will be noted that the memory materials in most of the foregoingexamples utilize electrodes on either side thereof whose compositionsare specifically selected. In embodiments of the three-dimensionalmemory array herein where the word lines (WL) and/or local bit lines(LBL) directly form these terminal electrodes by direct contact with thememory material, those lines (WL's, LBL's) preferably include theconductive materials described above. In embodiments using additionalconductive segments for at least one of the two memory elementelectrodes, those segments are therefore made of the materials describedabove for the memory element electrodes.

Steering elements are commonly incorporated into controllable resistancetypes of memory storage elements. Steering elements can be a transistoror a diode. Although an advantage of the three-dimensional architecturedescribed herein is that such steering elements are not necessary, theremay be specific configurations where it is desirable to include steeringelements. The diode can be a semiconductive p-n junction (notnecessarily of silicon), a metal/insulator/insulator/metal (MIIM), or aSchottky type metal/semiconductor contact but can alternately be a solidelectrolyte element. A characteristic of this type of diode is that forcorrect operation in a memory array, it is necessary to be switched “on”and “off” during each address operation. Until the memory element isaddressed, the diode is in the high resistance state (“off” state) and“shields” the resistive memory element from disturb voltages. To accessa resistive memory element, three different operations are needed: a)convert the diode from high resistance to its low resistance state, b)program, read, or reset (erase) the memory element by application ofappropriate voltages across or currents through the diode, and c) reset(erase) the diode. In some embodiments one or more of these operationscan be combined into the same step. Resetting the diode may beaccomplished by applying a reverse voltage to the memory elementincluding a diode, which causes the diode filament to collapse and thediode to return to the high resistance state.

For simplicity the above description has consider the simplest case ofstoring one data value within each cell: each cell is binary-wise eitherreset or set and holds one bit of data. However, the techniques of thepresent application are not limited to this simple case. By usingvarious discrete values of ON resistances and designing the senseamplifiers to be able to discriminate between several of such values,each memory element can hold multiple-bits of data and thus operates asa multiple-level cell (MLC). The principles of such operation aredescribed in U.S. Pat. No. 5,172,338 referenced earlier. Examples of MLCtechnology applied to three dimensional arrays of memory elementsinclude an article entitled “Multi-bit Memory Using ProgrammableMetallization Cell Technology” by Kozicki et al., Proceedings of theInternational Conference on Electronic Devices and Memory, Grenoble,France, June 12-17, 2005, pp. 48-53 and “Time Discrete Voltage Sensingand Iterative Programming Control for a 4F2 Multilevel CBRAM” bySchrogmeier et al. (2007 Symposium on VLSI Circuits).

One example semiconductor-based structure for implementing thethree-dimensional memory element array of FIG. 1A is illustrated in FIG.6, which is configured for use of non-volatile memory element (NVM)material that is non-conductive when first deposited and thus does notcreate shorts between vertically stacked word lines (WL's). Metal oxideof a type discussed above (e.g., HfO) tend to have this characteristic.Since the material is initially non-conductive, there is no necessity toisolate the memory elements at the cross-points of the word and bitlines from each other. Several memory elements may be implemented by asingle continuous layer of material, which in the case of FIG. 6 arestrips of NVM material oriented vertically along opposite sidewalls ofthe vertical bit lines in the y-direction and extending upwards throughall the planes. A significant advantage of the structure of FIG. 6 isthat all word lines and strips of insulation under them in a group ofplanes may be defined simultaneously (patterned) by use of a single maskand appropriate etch down process, thus greatly simplifying themanufacturing process.

Referring to FIG. 6, a small part of four planes 101, 103, 105 and 107of the three-dimensional array are shown. Elements of the FIG. 6 arraythat correspond to those of the equivalent circuit of FIG. 1A areidentified by the same reference numbers. It will be noted that FIG. 6shows the two planes 1 and 2 of FIG. 1A plus two additional planes ontop of them. All of the planes have the same horizontal pattern ofconductor, dielectric and NVM material. In each plane, metal word lines(WL) are elongated in the x-direction and spaced apart from each otherin the y-direction. Each plane (horizontal layer) includes a sublayer ofinsulating dielectric that isolates its word lines from the word linesof the plane below it or, in the case of plane 101, of the substratecircuit components below it. Extending through each plane is acollection of metal local bit line (LBL) “pillars” elongated in thevertical z-direction and forming a regular matrix of suchthrough-the-plane crossing conductors in the x-y directions.

Each bit line pillar is connected to one of a set of global bit lines(GBL's) in the semiconductive (e.g., silicon) substrate running in they-direction at the same pitch as the pillar spacing through the selectordevices (Qxy) formed in or on the substrate whose gates are driven bythe row select lines (SG's) elongated in the x-direction, which are alsoformed in or on the substrate. The selector devices Qxy may beconventional CMOS transistors (or vertical MOSFET thin film transistors,or Junction FET, or npn transistors) and may be fabricated using thesame process as used to form other conventional circuitry parts of theapparatus. In the case of using npn transistors instead of MOStransistors, the row select lines (SG) are replaced with the basecontact electrode lines elongated in the x-direction. Also fabricated inthe substrate but not shown in FIG. 6 are sense amplifiers, input-output(I/O) circuitry, control circuitry, and any other necessary peripheralcircuitry. There is one row select line (SG) for each row of local bitline pillars in the x-direction and one selector device (Q) for eachindividual local bit line (LBL).

Each vertical strip of NVM material is sandwiched between the verticallocal bit lines (LBL) and a plurality of word lines (WL) verticallystacked in all the planes. Preferably the NVM material is presentbetween the local bit lines (LBL) in the x-direction. A memory storageelement (M) is caused to be located at each intersection of a word line(WL) and a local bit line (LBL). In the case of a metal oxide describedabove for the memory storage element material, a small region of the NVMmaterial between an intersecting local bit line (LBL) and word line (WL)is controllably alternated between conductive (set) and non-conductive(reset) states by appropriate voltages applied to the intersectinglines.

In one embodiment, the NVM material includes Hafnium Oxide, the wordlines comprise TiN, and the bit lines comprise N+ silicon.

There may also be a parasitic NVM element formed between the LBL and thedielectric between planes. By choosing the thickness of the dielectricstrips to be large compared to the thickness of the NVM material layer(that is, the spacing between the local bit lines and the word lines), afield caused by differing voltages between word lines in the samevertical word line stack can be made small enough so that the parasiticelement never conducts a significant amount of current. Similarly, inother embodiments, the non-conducting NVM material may be left in placebetween adjacent local bit lines if the operating voltages between theadjacent LBLs remain below the programming threshold.

An outline of a process for fabricating the structure of FIG. 6 is asfollows:

-   -   1. The support circuitry, including the selector devices Q_(xy),        global bit lines GBL, row select lines SG and other circuits        peripheral to the array of memory cells, is formed in or on the        silicon substrate in a conventional fashion and the top surface        of this circuitry is planarized, such as by etching with use of        a layer of etch stop material placed over the circuitry.    -   2. Alternating layers of dielectric (insulator) and metal are        formed as sheets on top of each other and over at least the area        of the substrate in which the selector devices Q are formed. In        the example of FIG. 6, four such sheets are formed.    -   3. These sheets are then patterned (e.g., etched to define        isolated portions) by using a mask formed over the top of them        that has slits elongated in the x-direction and spaced apart in        the y-direction. All of the material is removed down to the etch        stop layer (e.g., TiN—not shown) in order to form the trenches        shown in FIG. 6 in which the local bit line (LBL) pillars and        NVM material is later formed. Contact holes are also etched        through the etch stop material layer at the bottom of the        trenches to allow access to the drains of the selector devices Q        at the positions of the subsequently formed pillars. The        formation of the trenches also defines the width in the        y-direction of the word lines (WL).    -   4. NVM material is deposited in thin layers along the sidewalls        of these trenches and across the structure above the trenches.        This leaves the NVM material along the opposing sidewalls of        each of the trenches and in contact with the sidewalls of the        word line (WL) surfaces that are exposed into the trenches.    -   5. Doped polysilicon (or suitable metallic electrode material)        is then deposited in these trenches in order to make contact        with the NVM material. The deposited material is patterned using        a mask with slits in the y-direction. Removal of the deposited        material by etching through this mask leaves behind the        illustrated local bit line (LBL) pillars. The NVM material in        the x-direction may also be removed between pillars during the        patterning process. The space between pillars in the x-direction        is then filled with a dielectric material and the top side        dielectric may be planarized back to the top of the preceding        structure.

A significant advantage of the configuration of FIG. 6 is that only oneetching operation through a single mask is required to form the trenchesthrough all the layers of material of the planes at one time. However,process limitations may limit the number of planes that can be etchedtogether in this manner. If the total thickness of all the layers is toogreat, the trench may need to be formed (extended in depth) by way ofsequential steps. A first number of layers are etched and, after asecond number of layers have been formed on top of the first number oftrenched layers, the top layers are subjected to a second etching stepto form trenches in them that are aligned with the trenches in thebottom layers. This sequence may be repeated even more times for animplementation having a very large number of layers.

To enable the memory to be denser (e.g., more memory elements per area),the size of the memory elements can be made smaller and the memoryelements can be arranged closer to each other than in the past. Toenable the memory elements to be closer to each other, one embodimentuses a vertically oriented selector device (e.g., three terminal switchand/or select transistor) for connecting the individual local bit linepillars to the respective global bit lines. For example, the selectordevices Q11, Q12, . . . , Q21, Q22, . . . of FIGS. 1A/1B can beimplemented as vertically oriented selector devices. In one embodiment,each vertically oriented selector device is a pillar select device thatis formed as a vertical structure, providing switched connection anddisconnection between a local bit line pillar (LBL) and a correspondingportion of the global bit line (GBL). The pillar select devices, unlikeprevious embodiments where they are formed within a CMOS layer, are inthe present embodiments formed in a separate layer (pillar select layer)above the CMOS layer/substrate, along the z-direction between the arrayof global bit lines and the array of local bit lines. The CMOS layer isin the substrate where the support circuitry is implemented, includingthe row select circuit and word line drivers. The use of verticallyoriented selector devices above, but not in, the substrate allows thememory elements to be arranged in a more compact fashion, therebyincreasing density. Additionally, positioning the vertically orientedselector devices above the substrate allows for other devices (e.g., theword line drivers) to be positioned in the substrate under the memoryarray rather than laterally outside of the area consumed by the memorycells array, which allows the integrated circuit to be smaller.

For example, a pillar shaped Thin Film Transistor (TFT) FET or JFET canbe can be used as the bit line selector device. In one exampleimplementation, a control node of the select transistor has a collarshaped hole, and the gate and channel region are formed in the hole withthe source/drain regions formed above/below the channel region. Anotheralternative is to define the gates as a rail etch and have the channeldeposited in a trench between the gates and singulated by an etch withcrossing lines mask (rather than holes).

FIG. 7 illustrates schematically and with the clutter of the memorycells left out, the three dimensional memory apparatus (“3D memory”)organized as a memory layer (or three-dimensional first structure)disposed on top of a pillar selecting layer (or three-dimensional secondstructure). The illustrated parts of the 3D memory apparatus (of forexample FIG. 1A) is formed on top of a semiconductive substrate havingCMOS circuitry monolithically integrated therein (substrate and itsinternal circuitry not explicitly shown) where structures in the CMOSsubstrate are referred to here as being in the FEOL (“Front End ofLines”). The vertically oriented selector devices provide selectivecoupling between respective individual ones of the vertical bit lines(that are above and not in the substrate) to individual global bit lines(GBL's) are now formed on top of the FEOL layer in the BEOL (“Back Endof Lines”) section. Thus, the BEOL comprises the pillar select layerwith the 3D memory layer disposed on top of it. The vertically orientedselector devices (such as Q11, Q12, . . . , Q21, Q22, . . . , etc.) areformed in the pillar select layer as vertically oriented select devices.The pillar select layer is formed above (and not in) the substrate. Thememory layer is similar to that described above, comprising of multiplelayers of word lines and memory elements. For simplicity, FIG. 7 showsonly one layer of word lines, such as WL10, WL11, . . . , etc. withoutshowing the memory elements that exist between each crossing of a wordline and a bit line.

FIG. 8A illustrates a schematic circuit diagram of a given verticallyoriented select device switching a local bit line to a global bit line.In the example, the local bit line LBL 440 is switchable to the globalbit line GBL 250 by a vertically oriented select transistor 500 such asQ11. The gate of the select transistor Q11 is controllable by a signalexerted on a row select line SG1.

FIG. 8B illustrates the structure of the vertically oriented selectdevice in relation to the local bit line and the global bit line. Theglobal bit line such as GBL 250 is formed below the vertically orientedselect device, in the FEOL for example as part of a metal layer-1 ormetal layer-2 provided within the FEOL and denoted in FIG. 8B as 502.The vertically oriented select device in the form of the vertical activeTFT transistor 500 (e.g., vertically oriented channel MOS TFT orvertically oriented channel JFET) is formed in the BEOL layer on top ofthe GBL 250 (and above, but not in, the substrate). The local bit lineLBL 440, in the form of a pillar, is formed on top of the verticallyoriented select device 500. In this way, the vertically oriented selectdevice 500 can switch the local bit line pillar LBL to connect with acorresponding portion of the global bit line GBL 250. In one embodiment,an ohmic contact area is provided for connecting semiconductor portionsof a respective one or more bit line pillar selectors (in 500) to ametal conductor provided as part of the GBL 250.

FIG. 9 shows a portion of the memory system, with the memory elementsbeing depicted as resistors (due to their reversible resistanceswitching properties). FIG. 9 shows the Pillar Select Layer below theMemory Layer and above (and not in) the Substrate. Only a portion of theMemory Layer is illustrated. For example, FIG. 9 shows bit lines LBL1,LBL2, LBL72. In this embodiment each of the word lines are connectedfrom one side of the WL to 72 memory elements. Each of the memoryelements is connected between a word line and a local bit line.Therefore, there will be 72 memory elements connected to the same wordline and different bit lines (of the 72 bit lines in a row). Each of thebit lines are connected to a respective global bit line by one of thevertically oriented selector devices 504 of the Pillar Select Layer. Thesignal SGx driving the set of vertically oriented selector devices 504depicted in FIG. 9 is controlled by the Row Select Line Driver. Notethat the Row Select Line Driver is implemented in the substrate. Theglobal bit lines (GBL1, GBL2, . . . GBL72) are implemented in a metallines layer disposed above the substrate. FIG. 9 shows one slice takenalong the word line direction such that each of the bit lines depictedin FIG. 9 are connected to different global bit lines via the verticallyoriented select devices 504. FIG. 9 also shows one of the word lines(e.g., WLr) as being driven by a word line selector circuit that is alsomonolithically integrated within the substrate.

In one embodiment, pairs of neighboring word lines (e.g., WLa and WLb,WLp and WLq, WLr and WLs) will be connected to memory elements that arein turn connected to respective common bit lines. FIG. 9 shows threepairs of word lines (WLa and WLb, WLp and WLq, WLr and WLs), with eachof the pair being on a different layer of the memory structure. In oneillustrative embodiment, the word lines receive address dependentsignals such as that word line WLb is selected for memory operationwhile word lines WLa, WLp, WLq, WLr and WLs are not selected. Althoughthe enabling signal applied on row select line SGX causes all of thevertically oriented select devices 504 to connect the respective globalbit lines to the respective local bit lines of FIG. 9, only the globalbit line GLBL1 includes a data value that is usable for programming (asnoted by the S level symbol). Global bit lines GLBL2 and GLBL72 do notinclude data levels sufficient for programming (as denoted by the U's).This can be due to the data pattern being stored as the global bit linesreceive data dependent signals. Note that while SGx receive an enablesignal, other select lines receive a disable signal to turn off theirconnected select devices.

Because local bit line LBL1 and word line WLb are both selected forprogramming, the memory element between local bit line LBL1 and wordline WLb is selected for the memory operation of setting it (as noted bythe S). Since local bit line LBL1 is the only bit line with programdata, the other memory elements connected to WLb will be half selected(as noted by the unprimed designator, h). The double-primed designationh″ indicates that half selection is occurring due to the level placed onthe word line (e.g., (WLb). By half selected, it is meant that one ofthe control lines (either the bit line or the word line) is selected butthe other control line is not selected. A half selected memory elementwill not undergo the memory operation. The word line WLa is notselected; therefore, the memory cell between WLa and the selected localbit line LBL1 is half selected, and the other memory elements on WLa areunselected (U). Since word lines WLp, WLq, WLr and WLs are not selected,their memory elements connected to LBL1 are half selected (h) and theother memory elements connected to those word lines are unselected (U).Similarly, the memory elements connected to selected word line WLb butnot to selected local bit line LBL1 are half selected (h″).

FIG. 10A is a cross-sectional view of a memory structure using thevertically oriented select device discussed above in FIGS. 1A, 3A andusing the three-dimensional memory structure of FIG. 6. As describedbelow, the memory structure of FIG. 10A is a continuous mesh array ofmemory elements because there are memory elements connected to both ofopposed sidewalls of the bit lines and memory elements connected to bothof opposed sidewalls of the word lines. At the bottom of FIG. 10A, theCMOS substrate is depicted. Implemented on the top surface of the CMOSstructure are various metal layers including ML-0, ML-1, and ML-2 whichare separated from one another by dielectric (not shown) and areoptionally interconnected one to the next above or below by contactvias. Line 526 of metal layer ML-2 serves as a respective global bitline (GBL). The Pillar Select Layer includes two oxide layers 520 with agate electrode forming material layer 522 sandwiched there between. Theoxide layers 520 can be SiO2. The metal line of ML-2, namely, 526serving as a global bit line can be implemented of any suitablematerial, including Tungsten, or Tungsten on a Titanium Nitride adhesionlayer or a sandwich of n+ polysilicon on Tungsten on Titanium Nitrideadhesion layer. Gate material 522 can be polysilicon, Titanium Nitride,Tantalum Nitride, Nickel Silicide or any other suitable material. Gatematerial 522 implements the row select lines SGx (e.g. SG1, SG2, . . .of FIG. 1A), which are labeled in FIG. 10A as row select lines 580, 582,584, 586, 588 and 590.

The memory layer includes a set of vertical bit lines 530 (comprising N+polysilicon). Interspersed between the vertical bit lines 530 are stacksof alternating oxide layers 534 and word line layers 536. In oneembodiment, the word lines are made from TiN. Between the vertical bitlines 530 and the stacks of alternating oxide layers 536 and word linelayers 536 are vertically oriented layers of reversible resistanceswitching material 532. In one embodiment the reversible resistanceswitching material is made of Hafnium Oxide HfO2. However, othermaterials (as described above) can also be used. Dashed box 540surrounds one example memory element which includes the reversibleresistance switching material 532 sandwiched between a word line 536 andvertical bit line 530. The memory elements are positioned above, and notin, the substrate. Directly below each vertical bit line 530 are thevertically oriented select devices 504, each of which comprises (in oneexample embodiment) a n+/p−/n+ TFT. Each of the vertically orientedselect devices 504 have gate oxide layers 505 on each side. FIG. 10Aalso shows an n+ polysilicon layer 524 providing connections from theTFT source regions to the underlying metal of the GBL 526. As can beseen, the npn TFT of vertically oriented select devices 504 can be usedto connect the global bit line GBL (layer 526) with any of the verticalbit lines 530.

FIG. 10A shows six row select lines (SGx) 580, 582, 584, 586, 588 and590 in the gate material layer 522, each underneath a stack of multipleword lines. As can be seen, each of the row select lines 580, 582, 584,586, 588 and 590 is positioned between two vertically oriented selectdevices 504, above and not in the substrate. Therefore each row selectline can provide an activating gate signal to either of the twoneighboring vertically oriented select devices 504; therefore, thevertically oriented select devices 504 are said to be double gated. Eachvertically oriented select device 504 can be controlled by two differentrow select lines, in this embodiment. One aspect of the verticallyoriented select devices incorporated to the base portion of each bitline pillar is that two adjacent vertically oriented select devicesshare a same interposed gate region. This allows the vertically orientedselect devices to be closer together.

The illustrated Pillar Select layer of FIG. 10A is shown to have just asingle transistor for each local bit line LBL merely for the sakesimplicity. In such a single transistor per LBL case, a combination ofstrong turn-off gate signals and weak turn-on gate signals may beapplied to the individual row select lines (SGx) 580, 582, 584, 586, 588and 590 of the gate material layer 522. A p− channel region that issandwiched on both of its opposed sides by row select lines (SGx)receiving strong turn-off gate signals will not be switched into anelectron conducting state and thus its transistor will remain turnedoff. A p− channel region that is sandwiched on both of its opposed sidesby row select lines (SGx) receiving weak turn-on gate signals will beswitched into an electron conducting state and thus its transistor willbe turned on. For immediately neighboring transistors where theirrespective p− channel region are sandwiched so as to receive a weakturn-on gate signal on only one side while at the same time receiving astrong turn-off gate signal on the opposed other side will besubstantially kept below threshold and thus not turned on. Accordingly,individual transistors can be selectively turned on or off even thoughpairs of them share an interposed common gate electrode (e.g., 582).

Another approach, not shown in FIG. 10A is to vertically interposebetween the upper oxide layer 520 and the lowest bit line oxide layer534, another patterned layer of spaced apart gate lines (call themSGb's) with p− semiconductors and gate oxides sandwiched horizontallybetween these inserted SGb's (not shown) so as to define for eachillustrated NPN MOSFET in FIG. 10A, yet another NPN MOSFET stacked inseries above it. For such an in-series connected combination of selectortransistors for each local bit line (LBL 530), all the in-seriesconnected transistors have to be turned on in order to create aconnection between the local bit line (LBL 530) and the global bit lineGBL (526). In such a case, turn-on gate voltages are applied to theSGb's (not shown) in the column next adjacent to rather than in the samecolumn whose SGx (e.g., 582) is receiving a turn-on gate voltage. Inthat case, only the local bit line LBL whose two in-series selectortransistors are both receiving turn-on gate voltages will be connectedto the global bit line (e.g., GBL 526). Alternatively, each transistormay include dual serial gate electrodes along the sidewall of thechannel region as shall be seen in the case of next described FIG. 10B.FIG. 12 shows a schematic diagram of vertically stacked and seriesconnected transistors whose gates are respectively driven by group(e.g., row) select lines SGa and SGb.

Referring to FIG. 10B, shown here is a divided local bit lines (LBL's)configuration where, for each one vertical N+ poly bit line 530 of FIG.10A there is formed a pair (530 a/530 b) of immediately adjacent andisolated-from-one-another local bit lines, 530 a and 530 b with anisolation trench or vertical insulative layer 531 interposed betweenthem. Additionally, in FIG. 10B, vertically extending bit line selectordevices 504′ are formed so as to have two gate electrodes on eachsidewall of the corresponding pillar structure. For example, theleftmost of the illustrated selector devices 504′ has gate electrodes580 a and 580 b disposed on its left side where those gate electrodesare vertically isolated from one another by insulative layer 520 b andare horizontally isolated from the P− channel to their right by avertically extending gate insulator 505 (which could be gate oxide oranother insulative material). Additionally, the leftmost of theillustrated selector devices 504′ has gate electrodes 582 a and 582 bdisposed on its right side in a similar vertically stacked and isolatedconfiguration as those on the left. Moreover, gate electrodes 582 a and582 b serve as the left side gate electrodes for the next adjacentselector device 504′ to the right. The pattern repeats as is illustratedin FIG. 10B.

If it is desired to turn on just the leftmost of the illustratedselector devices 504′, then one option is to apply turn-on gate voltagesto gate electrodes 580 a and 582 b (diagonally opposed gate electrodesof that vertical selector device) while applying turn-off gate voltagesto all the rest of the gate electrodes, including to 580 b and 582 a.Another option is to apply turn-on gate voltages to gate electrodes 580b and 582 a (diagonally opposed gate electrodes of that verticalselector device) while applying turn-off gate voltages to all the restof the gate electrodes. The two options are not equivalent because onesteers conduction diagonally to the upper right of the P− channel andthus to bit line 530 b of the illustrated bit line pair 530 a/530 bwhile the other option steers conduction diagonally to the upper left ofthe P− channel and thus to bit line 530 a of the illustrated bit linepair 530 a/530 b. In one embodiment, insulative trench 531 extends fromthe top of the pillar and down to a level below the top of the P−channel (e.g., half way vertically into the P− channel) such that theimmediately adjacent and isolated-from-one-another local bit lines, 530a and 530 b are kept isolated from one another and are thusindependently connectable to the global bit line GBL 526. Various otherways of driving the illustrated gate electrodes, 580 a, 580 b, 582 a,582 b, 584 a, 584 b, 590 b may be used including allowing certain onesof them to float. For example, in connecting the leftmost bit line 530a, a device turn-on gate voltage may be applied to gate 580 b while 580a floats and at the same time a device turn-on gate voltage may beapplied to gate 582 a while 582 b floats and then all the other gateelectrodes (e.g., 584 a, 584 b, etc.) are driven by device turn-off gatevoltages. Capacitive coupling between each driven gate electrode and itsvertically adjacent, but floating counterpart can cause the floatinggate to acquire a charge of opposite polarity from that of the activelydriven gate electrode. Before final selection is made and then theglobal bit lines GBL's are driven as opposed to being floated, thevarious gate electrodes may be pre-charge to desired levels. These aremerely non-limiting examples of how the structure of FIG. 10B may beused.

Referring to dashed box 540′ of FIG. 10B, the network of resistive andconductive elements present for each horizontal layer (a.k.a. a planehaving thickness) of memory cells is different from the like-numberedcounterparts of FIG. 10A because the isolating trenches 531 (which inone embodiment, are filled with insulative material) prevent parasiticcurrents from flowing endlessly about the matrix. More specifically, ifa programming voltage VPGM is applied to the local bit line LBL 530 b ofthe boxed memory cell and a current sinking voltage V=0 is applied tothe word line (WL) 536 of the boxed memory cell, there is memory cell tothe left of the boxed memory cell which will also have the programmingvoltage VPGM applied to it. The only further memory cells that have theprogramming voltage VPGM applied to them are the ones vertically abovethe memory cell of dashed box 540′. To prevent significant parasiticcurrents from flowing into these vertically above memory cells,predetermined boost voltage Vboost can be applied to their respectiveword lines as shall be better explained when FIG. 11B is described.

Referring to FIG. 10C, shown is a cross-sectional view of a memorystructure 2500 that is somewhat similar to that depicted in FIG. 10B,except that the gate lines, SG11, SG12, . . . , etc. of FIG. 10C are notshared ones shared that are shared by successive transistors as is thecase in FIG. 10B. Instead each primarily vertically extending transistor(e.g., each N-type MOSFET having an N+ drain region vertically stackedon top of an at least partly not-shared P− channel region) is controlledby its adjacent row select line (e.g., SG12). In FIG. 10C, referencenumbers in the 2500 century series are used in correspondence with thoseof the 500 century series of FIG. 10B so that the two can be compared.One difference between FIGS. 10B and 10C is that in FIG. 10C, the P−channel regions 2504 c abut directly against the N+ poly line 2504 s ofmetal global bit line GBL 2526 whereas in FIG. 10B a verticallyextending N+ source region is provided. The process step of forming avertically extending N+ source region is avoided for the structure 2500of FIG. 10C by instead using the N+ poly line 2504 s of metal global bitline GBL 2526 for providing portions thereof which function as sourceregions.

In other words, in FIG. 10C, the P− channel region 2504 c T-bones into ahorizontal source region 2504 s. More specifically, in the illustratedstructure 2500, an N+ heavily doped polysilicon line 2524 is providedextending in the X-direction on top of a corresponding metal GBL line2526 with an ohmic contact there between. Spaced apart pillars ofalternating dielectric and conductor (e.g., metal) are formed atop thepolysilicon line 2524. In the illustrated embodiment, selector gatelines 2582 a (SG11), 2582 b (SG12), 2584 a (SG21) and 2584 b (SG22) areformed on a thin dielectric layer atop the polysilicon line 2524, wherethe selector gate lines, SG11-SG22, extend in the Y-direction over aplurality of spaced apart N+ doped source lines similar to theillustrated one 2524 with all similarly extending in the X-direction.The selector gate lines (2582 a-2584 b) may be composed of heavily dopedgate polysilicon and/or a metal or metal silicide. Capacitive couplingbetween the selector gate lines (2582 a-2584 b) and the under-crossingsource lines (e.g., 2524) should be relatively weak while capacitivecoupling between the selector gate lines (2582 a-2584 b) and theirrespectively adjacent P− channel regions (e.g., 2504 c) should besubstantially stronger. The dielectric thicknesses in the horizontal andvertical directions off the selector gate line surfaces areappropriately controlled. In one embodiment, the X-direction dimensionof each SG line is substantially smaller than the Z-direction dimensionand thus capacitive coupling area between gate and source issignificantly reduced. In addition to the dielectric being providedbetween immediately adjacent selector gate lines (e.g., 2584 a-2584 b)and between each and its respective source and channel regions, furtherdielectric 2534 a is deposited above the spaced apart selector gatelines, SG11-SG22 at least to vertical height extent planned for thedrain regions (e.g., 2504 d) and a conductive etch-back stop layer 2504e. In one embodiment, a CVD process such as the Applied MaterialsEterna™ dielectric one is used for filling dielectric about and abovethe selector gate lines (2582 a-2584 b).

Alternating layers of unpatterned metal such as 2536 a and dielectricsuch as 2534 b are stacked one above the next, with the topmostdielectric layer 2534 e being substantially thicker than the others.Pillars separating, deep trenches 2570, 2571 and 2572 extend from thetopmost dielectric layer 2534 e down through the N+ drain regions 2504 dand partly into the illustrated channel regions 2504 c so as to defineimmediately adjacent and isolated-from-one-another local bit lines suchas 2530 b and 2530 c, and corresponding immediately adjacent and partlyisolated-from-one-another transistors (having a shared source region2504 s) where insulative material and/or an air gap is interposedbetween the isolated-from-one-another local bit lines (e.g., 2530 b and2530 c) and between the drain regions 2504 d of their correspondingdrive transistors. The separated pillars have patterned metal layers(e.g., 2536 a, 2536 b, 2536 c, 2536 d, . . . ) defining respective wordlines (e.g., WL11, WL12, . . . WL23, WL24, . . . ) connecting to memorycells disposed along the vertical sidewalls of the word lines. It isunderstood that the illustrated number of four WL layers is merelyexemplary and not limiting. It is also understood that the patternedword lines may have comb-like structures similar to the ones shown inFIG. 14 except that in the present case there will be two rows ofimmediately adjacent and isolated-from-one-another local bit lines(e.g., 2530 b and 2530 c of FIG. 10c ) between the fingers ofinterleaved combs rather than just one row of bit lines.

Referring to FIG. 11A, shown is a cross-sectional view of a memorystructure that is similar to that depicted in FIG. 10B, except thatoxide layers 520 a, 520 b, 520 c have been replaced by oxide regions590′ and gate electrodes 580 a, 580 b, 582 a, etc. have been replaced bygate electrodes (row select lines) 592. Oxide regions 590′ extendbeneath the gate electrodes 592 so as to be interposed between the gateelectrodes 592 and source line layer 524. The embodiment of FIG. 11A isreferred to as the split gate structure. Each vertically oriented selectdevice 504 is turned on by applying a high voltage to a selected one orboth of its neighboring row select lines 592.

In prior designs, word line drivers were implemented in the substratebut outside the area shaded by the memory array (in other words, notunderneath the memory array). To make the integrated circuit smaller, itis preferable to implement the word line drivers underneath the memoryarray. In some cases, a word line driver is as big in size as 16 wordlines aggregated. Thus, the word line drivers have been too big to fitunderneath the memory array. One proposed solution is to connect oneword line driver to a group of multiple word lines connected together,where a memory system will have many of such groups. In one exampleimplementation, 16 (or another number of) word lines will be connectedtogether, and the connected group of word lines will be connected to asingle word line driver. In one example, the 16 word lines are connectedtogether to form a comb shape. However, other shapes can also be used.Using one word line driver to drive 16 (or a different number of) wordlines in a single comb (or other shaped structure) reduces the number ofword line drivers need. Therefore, the word line drivers can fitunderneath and not extend beyond the footprint area of the memory array.The use of the vertically oriented select devices described above alsoprovides more room underneath the memory array (e.g., in the substrate)in order to implement the word line drivers. Additionally, using one ormore word line drivers to drive multiple word lines reduces the numberof wires needed from the word line drivers to the word lines, therebysaving room, simplifying routing, reducing power and reducing the chanceof a fault. Additionally, because the word lines and bit lines are nowshorter, there is a smaller time constant than in previous designs.Because there is a smaller time constant, the lines will settle quickerand there is no significant transient effect that will cause adisturbance for unselected memory elements.

FIG. 13 is a partial schematic depicting a portion of a memory systemwhich uses the comb structure described above. For example, FIG. 13shows combs 800, 802, 804 and 806. A memory system is likely to havemany more combs than depicted in FIG. 13; however, FIG. 13 will onlyshow four combs to make it easier to read. Each comb includes 16 wordlines, also referred to as word line fingers. For each comb, a first setsuch as eight (e.g., half) of the word line fingers are on a first sideof the comb and are in a first block while another set such as eight(e.g., half) of the word line fingers are on the second side of the comband are in a second block that is next to the first block. FIG. 13 showsthat combs 800 and 802 (and all of the attached word line fingers) arein a first plane or level of the memory array, and combs 804 and 806(and all of the attached word line fingers) are on a second plane orlevel of the memory array. Each of the combs has a signal line to oneword line driver. For example, word line comb 800 is connected to wordline driver 820. When word line comb 800 is selected, all of the wordline fingers connected to word line comb 800 are selected (e.g., receivethe selected word line signal). Word line comb 802 is connected to wordline driver 822. Word line comb 804 is connected to word line driver824. Word line comb 806 is connected to word line driver 826. Word linedrivers 820, 822, 824 and 826 are implemented underneath the memoryarray in the substrate. In one embodiment, a word line driver is locatedunderneath the block (or one of the blocks) for which it is connectedto.

FIG. 13 shows that word line comb 800 includes word line WL1 which isconnected to memory elements that are in turn connected to local bitlines LB1, LB2, . . . LB72 (72 local bit lines). Word line comb 802includes word line WL2 that is also connected to memory elements for thesame 72 local bit lines LBL1, LBL2, LBL72. In this arrangement, wordline comb 800 is on one side of the memory array and word line comb 802is on the opposite side of the memory array such that the word linefingers from comb 800 are interleaved with the word line fingers of wordline comb 802. To make it easier to read, FIG. 13 is created such thatword line combs 800, 804, and their word line fingers appear as dottedlines to show that they are from the right side of the memory arraywhile combs 802, 806 are solid lines to show that they are from the leftside of the memory array. In this arrangement, each memory elementconnected to a word line of word line comb 802 for the block beingdepicted will have a corresponding memory element connected to a wordline for word comb 800 that connects to the same local bit line. Forexample, in one embodiment, memory element 810 (connected to WL2) andmemory element 812 (connected to WL1) are both connected to LBL1. Inanother embodiment, each local bit line of adjacent but isolated bitline pairs (e.g., 530 a/530 b of FIG. 11A) is connected to correspondingmemory cells by way of only one rather than sidewalls of the bit line.In that case the dashed second memory cells such as 812 will not beconnected to the same bit line that has the non-dashed cell (e.g., 810)connected to it. The system of FIG. 13 may be operated such that if LBL1is selected, only appropriate memory element (e.g., 810) should beselected. Note that the local bit lines are connected to the appropriateglobal bit lines by the vertically oriented select devices 504(described above) that are above the substrate. In other embodiments,the word line comb structure can be used without using the verticallyoriented select devices. For example, the word line comb structures canbe used with select devices that are implemented in the substrate.

FIG. 14 is a top view of one layer of the memory array depicting part oftwo word line combs 840 and 842. As described above, each word line combhas word line fingers on two sides of its spine. FIG. 14 only shows theword line fingers on one side of each spine (with stubs being depictedfor the word line fingers on the other side of the spine). For example,word line comb 840 includes word line fingers 840 a, 840 b, 840 c, 840d, 840 e, 840 f, 840 g and 840 h. Word line comb 842 includes word linefingers 842 a, 842 b, 842 c, 842 d, 842 e, 842 f, 842 g and 842 h.Between adjacent word line fingers from word line combs 840 and 842(which are interleaved as describe above), are vertical bit lines 850(note that only a subset of vertical bit lines are labeled withreference number 850 to make the drawing easy to read). At the edge ofthe word line comb, the row of vertical bit lines is shared with anadjacent word line comb. Between each vertical bit line and each wordline finger is a memory element. To make the drawing easy to read,memory elements are only depicted for local bit line 852.

Because two word line comb structures are interleaved and share localbit lines, biasing memory elements connected to one of the word linecombs (and not the other) will have an effect on the other word linecomb. Biasing the vertical bit lines will have an effect on all memoryelement (for any word line comb) connected to those bit lines, eventhough the respective word line combs are not biased. Biasing a wordline comb will bias all 16 (or other number of) word line fingers thatare part of that word line comb. However, it is typically desired toonly program or read from memory elements connected to one word linefinger of the comb.

FIG. 15A is a flow chart describing one embodiment for programmingmemory elements. The process of FIG. 15A can be performed as part of aSET process or as part of a RESET process. In Step 850, all word linesare driven to a common signal of ½ VPP. In general ½ Vpp represents theintermediate unselected word line voltage and is not necessarily exactlyhalf the programming voltage Vpp. Due to IR drops and other particularsof each embodiment the intermediate unselected biases can be adjustedhigher or lower than half the programming voltage and may range from ¼to ¾ of the Vpp. In one embodiment, VPP is the largest voltage used onthe integrated circuit for the memory array. One example of VPP is 4volts; however, other values can also be used. In step 852, the localbit lines are all floated; therefore, they will drift to or near ½ VPP.In step 854, ½ VPP (e.g., an unselected voltage) is applied to allglobal bit lines. In step 856, one or more data dependent signals areapplied to the global bit lines; for example, VPP is applied to only theselected global bit lines. In step 858, the vertically oriented selectdevices discussed above are turned on in order to connect the selectedlocal bit lines to the selected global bit lines. In step 860, selectedlocal bit lines will rise to or toward VPP. In step 862, the selectedword line comb (or just an individual word lines) is pulled down toground. In some embodiments more than one word line comb can be pulleddown to ground. In other embodiments, only one word line comb can beselected at a time.

FIG. 15B is a flow chart describing other embodiments for programmingmemory elements. The process of FIG. 15B is similar to the process ofFIG. 15A, except that the voltage differential experienced by theprogrammed memory elements has a reverse polarity. Therefore, if theprocess of FIG. 15A is used to SET the memory element, then the processof 15B can be can be used to RESET the memory element. Similarly, if theprocess of FIG. 15A is used to RESET the memory element then the processof FIG. 15B can be used to SET the memory element. In step 870 of FIG.15B, all word lines are driven to a common signal of ½ VPP. In step 872,all local bit lines are floated and they will therefore drift to at ornear ½ VPP. In step 874, ½ VPP is applied to the all global bit lines.In step 876, one or more data dependent signals are applied to theglobal bit lines; for example, the selected global bit lines are pulleddown to ground. In step 878, the vertically oriented select devices areturned on to connect the selected local bit lines to the selected globalbit lines. In step 880, the selected local bit lines are pulled down toor toward ground in response to being connected to the global bit lines.At step 882, VPP is then applied to the selected word line comb (ormultiple word line combs in some embodiments) in order to create theappropriate differential to cause the programming operation to beperformed.

FIG. 16 is a flow chart describing one embodiment of a process forreading memory elements. In step 940, all word lines are driven to acommon signal of Vread. In one embodiment Vread is equal to 2 volts;however, other values can also be used. In step 942, the local bit linesare floated; therefore, they will drift to or near Vread. Some floatinglocal bit lines will drift to a voltage just under Vread if they areconnected to a memory element in the low resistance state. In step 944,the global bit lines are charged to one or more signals; for example,the global bit lines are charged to Vread. In step 946, the selectedword line comb (or in some embodiments multiple word line combs) arepulled down to ground. In step 948 the appropriate vertically orientedselect devices are turned on in order to connect the appropriateselected local bit lines to the selected global bit lines. In step 950,current through the selected memory element flows from the selected bitline, from the vertical select device, from the associated global bitline, through a current conveyor clamp device, and ultimately from asense node in the associated sense amplifier. In step 952, the senseamplifier will sense the current and determine the state of the memoryelement.

Given the above descriptions of how resetting, setting and sensing thestates of the memory cells can be accomplished by way of application ofappropriate voltages to selected bit lines and selected word lines (orword line combs), reference is now made to FIG. 11B which shows one wayof programming a desired memory cell (dashed box 541) while not havingto charge up word lines (e.g., comb fingers) of a laterally adjacentcolumn of memory cells.

More specifically, it is assumed that the memory cell in dashed box 541is to be programmed by selectively supplying a programming voltage VPGMto the bit line on the left side of the respective NVM layer 532 and byselectively supplying a current sinking voltage (e.g., V=0) to the wordline 536 on the right of the subject NVM region so that a programmingcurrent of desired polarity flows through the addressed memory cell (theone in box 541). To that end, the programming voltage VPGM is suppliedto the metal global bit line GBL 526. A selector device turning-on gatevoltage (Gate ON) is applied to the gate electrode 592 on the right sideof the annotated, dual pillar region of FIG. 11B while a selector deviceturning-off gate voltage (Gate OFF) is applied to the gate electrode 592on the right side. As a result, the left side bit line 530 aa floatswhile the right side bit line 530 bb has the VPGM level propagatedvertically along the vertical extent of that bit line 530 bb.

In order to minimize the flow of parasitic currents (and/or theformation of undesired electric fields), in one embodiment, asink-preventing or field-reducing voltage, Vboost is selectively appliedto the word lines vertically above and below the word line (536 in box541) that is receiving the current sinking or field-creating voltage(e.g., V=0). Power is consumed in the charging up of the selected wordlines to the Vboost level. The presence of the insulative verticaltrench 531 within the subject pillar makes it possible to leave or setthe laterally adjacent word lines (the ones on the left side of thesubject pillar) to V=0 and/or to be in a floating state. As a result,the floating left side bit line 530 aa is urged to the V=0 or otherstate of its adjacent word lines (536—the ones on the left side) if theadjacent word lines are all floated. This saves on power consumptionsine only the word lines on the right side of the subject pillar need tobe charged up to Vboost, with the exception of the word line 536 of thebeing-programmed cell (in box 541). In one embodiment, the word lines536 on the left sides of respective pairs of immediately adjacent andisolated-from-one-another local bit lines, 530 a/530 b (or 530 aa/530bb) are fingers of corresponding first word line combs disposed in therespective horizontal planes. At the same time, the word lines 536 onthe right sides of the respective pairs of immediately adjacent andisolated-from-one-another local bit lines, 530 a/530 b (or 530 aa/530bb) are fingers of corresponding second word line combs disposed in therespective horizontal planes. The fingers of the respective first andsecond word line combs may be interdigitated as described above.

Reference is now made to FIG. 17. But first looking back at FIGS.10A/10B, it is to be noted that memory element 540 is identified using adashed box 540. FIG. 17 depicts a close-up, but not limiting, possiblecross sectional configuration for the memory element of box 540. Theclose up shows a portion of the material comprising the bit line 530 (or530 a), reversible resistance switching material 532 and a portion ofthe material comprising the word line 536. The portion of the materialcomprising the bit line 530 (or 530 a) and the portion of the materialcomprising the word line 536 can act as electrodes for respectiveterminal portions of the memory element 540. In one embodiment,reversible resistance switching material 532 comprises a metal oxide. Asdescribed above, other types of materials can also be used. Table 1provides some examples (but not an exhaustive list) of materials thatcan be used for the memory elements.

TABLE 1 Electrode Reversible Resistance Electrode (Bit Line side)Switching Material (Word Line side) 20 nm n+ Si 3 nm (or less) AlOx 5-10nm TiN 10 nm n+ Si 3 nm AlOx 5-10 nm TiN 20 nm n+ Si 3 nm AlOx 5-10 nmTiN 20 nm n+ Si 2 nm AlOx 5-10 nm TiN 20 nm n+ Si 2 nm HfOx 5-10 nm n+Si 20 nm n+ Si 3 nm HSiON 5-10 nm TiN  8 nm n+ Si 3 nm HSiON 5-10 nm TiN20 nm n+ Si 3 nm TaOx 5-10 nm TiN 20 nm n+ Si 3 nm ZrOx 5-10 nm TiN 20nm n+ Si 3 nm HfOx 5-10 nm TiN

In one set of example implementations, (1) 20 nm n+Si, 3 nm HfOx, 5-10nm TiN; and (2) 20 nm n+Si, 2 nm AlOx, 5-10 nm TiN are preferred sets ofmaterials. Thin switching materials layers are less robust to thecurrent surges and high fields needed to form the switching material.Nevertheless, the switching material thickness in many embodiments inaccordance with the present disclosure are reduced below 5 nm andpreferably below 3 nm when in combination with a cathode electrodematerial with a low electron injection energy barrier to the switchingmaterial. Material choices are envisioned where the thickness of theswitching material is reduced from typical values to be less than 3 nmand the cathode electrode material for forming has an energy barrierless than 1 eV to the switching material. Without being bound by anyparticular theory, the beneficial effect can be significant because boththe material thickness reduction and the electron injection energybarrier reduction reduce the energy released in the forming event byelectrons being injected into the switching material. Higher enduranceand retention memory element are achieved.

Other buffer and barrier layers as may be required for processing andcell reliability can be added in some embodiments. For example, theremay be a nm scale Titanium Oxide layer above or below the TiN layers.These buffer and barrier layers may be off ideal stoichoimetry.

The thicknesses are examples but various embodiments may be higher orlower. Highly defected metal oxide such as HfSiON, AlON, or AL dopedHfOx are desirable in some embodiments for lower voltage operation andhighest data retention memory cells.

Even with the same structure, the process condition such as annealingtemperature and time can make a difference. In the example of 20 nmn+Si/3 nm HfO2/10 nm n+Si, the annealing condition after HfOx depositionshould be at lower temperature and longer time (e.g., ˜540 C for 1hour). The device after this annealing behaves differently than previousstandard 750 C 60 s RTA.

As described above, memory element 540 may be reversibly switchedbetween two or more states. For example, the reversible resistancematerial 532 may be in an initial high resistance state upon fabricationthat is switchable to a low resistance state upon application of a firstvoltage and/or current. Application of a second voltage and/or currentmay return the reversible resistivity-switching material to a highresistance state. FIG. 18 is a graph of voltage versus current for oneexample embodiment of a metal oxide reversible resistance-switchingmemory element. Line 1720 represents the I-V characteristics of thereversible resistance-switching memory element when in the highresistance state (ROFF). Line 1722 represents the I-V characteristics ofthe reversible resistance-switching memory element when in the lowresistance state (RON). Line 1721 represents the I-V characteristics ofa fresh reversible resistance-switching memory element after forming butprior to resetting and setting of its switchable-to states.

To determine which state the reversible resistance-switching memoryelement is in, a voltage is applied and the resulting current ismeasured. A higher measured current indicates that the reversibleresistance-switching memory element is in the low resistance state. Acomparatively lower measured current (for the same driving voltage)indicates that the memory element is in the high resistance state. Notethat other variations of a memory element having different I-Vcharacteristics can also be used with the technology herein. In bipolarswitching mode of operation suitable for many materials, the values ofVset and Vreset are opposite in polarity.

Before forming, a reversible resistance-switching memory element isconsidered fresh. If the forming voltage Vf and sufficient current isapplied to a fresh reversible resistance-switching memory element, thememory element will be formed and will go into a low resistancecondition (which, in some embodiments coincides with the low resistancestate). Line 1723 shows the behavior when Vf is applied. The voltagewill remain somewhat constant and the current will increase. At somepoint, the reversible resistance-switching memory element will be in thelow resistance condition/state and the device behavior will be based online 1722 or something like line 1722.

While in the high low resistance state (see line 1720), if the voltageVset and sufficient current is applied, the memory element will be SETto the low resistance state. Line 1724 shows the behavior when Vset isapplied. The voltage will remain somewhat constant and the current willincrease. At some point, the reversible resistance-switching memoryelement will be SET to the low resistance state and the device behaviorwill be based on line 1722.

While in the low resistance state (see line 1722), if the voltage Vresetand sufficient current is applied, the memory element will be RESET tothe high resistance state. Line 1726 shows the behavior when Vreset isapplied. At some point, the memory element will be RESET and the devicebehavior will be based on line 1720. Note that in one embodiment, themagnitude of the forming voltage Vf may be greater than the magnitude ofVset, and the magnitude of Vset may be greater than the magnitude ofVreset.

In one embodiment, Vset is approximately 3.5 volts, Vreset isapproximately −2 volts, Iset_limit is approximately 5 uA and the Iresetcurrent could be as high as 30 uA.

Looking back at FIG. 17, the thickness of the reversible resistancematerial 532 is chosen so that the fresh memory element (before aFORMING process) is in range of 10 to 1000 times more resistive thandesired high resistance state (after a RESET operation). In oneembodiment, the thickness range is 3 nm or less; however, other rangescan also be used.

The materials of the memory element 540 (portion of the materialcomprising the bit line 530, reversible resistance switching material532 and portion of the material comprising the word line 536) each havea work function (based on the conduction bands of a semiconductingmaterial or an electron affinity if a metallic material). When designinga memory element, the reversible resistance switching material 532 andthe cathode are chosen so that electron injection energy barrier is lessthan 1 eV by matching work function of the electrode and electronaffinity of the reversible resistance switching material 532, byreducing effective work function of the electrode, or by both effects.

In one embodiment, when creating the electrode (e.g., creating thevertical bit line), the silicon material is annealed. The annealingconditions are chosen to reduce trap depth of the reversible resistanceswitching material 532 to less than 1.0 eV. This is applicable if MeOxbulk conduction is dominated. Proper annealing conditions may alsoreduce the effective work function. Additionally (and optionally),cathode deposition conditions can be chosen to produce an interfacelayer between the cathode (e.g. bit line) and the reversible resistanceswitching material 532 which reduces effective work function of thecathode. Sputtering (e.g., Argon sputtering) can be used to reduce thework function of the electrode.

In some embodiments, the bit line can serve as the cathode and the wordline as the anode, while in other embodiments the bit line can serve asthe anode and the word line can serve as the cathode.

In one example implementation, the polarity of the FORMING voltage Vf ischosen so that the electrode with the lowest electrode to reversibleresistance switching material barrier is chosen as the cathode. That is,the bit line to the reversible resistance switching material has a firstelectron injection energy barrier and the word line to the reversibleresistance switching material has a second electron injection energybarrier. If the first electron injection energy barrier is less than thesecond electron injection energy barrier, then the bit line will be usedas the cathode and the word line will be used as the anode. To achievethis, a positive forming voltage Vf is applied to the word line andground is applied to the bit line. Alternatively, a higher positivevoltage is applied to the word line, as compared to the bit line, suchthe difference in potential between the word line and the bit line isthe forming voltage Vf. The bit line would be at a lower positivevoltage potential than the word line. When the bit line serves as thecathode, the direction of the electric field is from the word line tothe bit line (see arrow 1700 of FIG. 22) and the direction of electroninjection into the reversible resistance switching material 532 is fromthe bit line to the word line (see arrow 1702 of FIG. 17). The cathodeserves to emit electrons.

If the second electron injection energy barrier is less than the firstelectron injection energy barrier, then the word line will be used asthe cathode and the bit line will be used as the anode. To achieve this,the positive forming voltage Vf is applied to the bit line and ground isapplied to the word line. Alternatively, a higher positive voltage isapplied to the bit line, as compared to the word line, such thedifference in potential between the bit line and the word line is theforming voltage Vf. The word line would be at a lower voltage potentialthan the bit line.

FIG. 19 is a flow chart describing one embodiment of a process forFORMING. In step 1802, the forming voltage Vf is applied as a pulse tothe memory element via the appropriate word line and bit line. Thepolarity of the voltage is such that the electrode with the lowerelectron injection energy barrier is the cathode, as described above. Inone example, the pulse is at 4.7 volts for approximately 2 microseconds. In step 1804, a read voltage is applied to the memory element.In step 1806, the current through the memory element (and through thebit line) in response to the read voltage is sensed. If the currentsensed in step 1806 is a lower current, indicating that the memoryelement is still in a high resistance condition (see step 1808), thenthe process loops back to step 1802 and another pulse is applied. If thecurrent sensed in step 1806 is a higher current, indicating that thememory element is in the low resistance state (see step 1808), thenFORMING is complete (step 1810). After FORMING is compete, the memoryelement can be operated by performing cycles of RESETs and SETS, as wellas read processes.

In one embodiment, the system will use an on-chip resistor (orequivalent) serially connected with the memory element, with aresistance in range 100 K ohm to 500 K ohm, during FORMING to limit themaximum current across the reversible resistance switching material and,therefore, produce a formed state (low resistance) in 100M ohm to 10 Gohm. One option for an effective resistance serially connected to thememory element is to use an on-chip transistor connected with the memoryat its drain to control maximum current in the range of 10 nA to 1 uAduring FORMING to produce the formed low resistance state in 100M ohm to10 G ohm. For example, the vertically oriented select devices (e.g., Qxxof FIGS. 1A/1B) can be used to limit the current in/through the verticalbit lines during the FORMING process. As described above, the selectdevices are transistors, such as thin film transistors (as well as othertypes of transistors). These transistors have threshold voltages suchthat when a high enough voltage is applied to the gate, the transistorsturn on. An “ON” voltage is defined as the gate voltage used tosufficiently turn on the transistor such that the transistor allows themaximum current to flow in its channel without breaking the transistor.An “OFF” voltage is defined as the gate voltage for which no current (ora sufficiently small amount of current to effectively be considered nocurrent) flows in the channel of the transistor. An “INTERMEDIATE”voltage is defined as a gate voltage greater than the OFF voltage andless than the ON voltage such that a limited current flows in thechannel of the transistors. For example, the “INTERMEDIATE” voltage mayonly allow 50% (or 30%, 60% or other fraction) of the maximum current toflow in the channel of the transistor/switch. Since the channel of thetransistor is in series with the vertical bit line, limiting the currentin the channel of the transistor comprising the select device will limitthe current through the connected bit line. In one embodiment, the bitline current during forming is limited to a range of 10 nano amps to 1micro amp.

In one example, the SET voltage Vset is the same polarity as the FORMINGvoltage Vf, and the RESET voltage Vreset is the opposite polarity as theFORMING voltage Vf. FIGS. 15A and 15B describe the SET and RESETprocesses. In one example, the bit line electron injection energybarrier is lower than the word line electron injection energy barrier,such that the bit line serves as the cathode; therefore, the FORMINGvoltage is applied with a positive (or higher) potential at the wordline, the process of FIG. 15B is used to SET and the process of FIG. 15Ais used to RESET.

In another example, the word line electron injection energy barrier islower than the bit line electron injection energy barrier, such that theword line serves as the cathode; therefore, the FORMING voltage isapplied with a positive (or higher) potential at the bit line, theprocess of FIG. 15A is used to SET and the process of FIG. 15B is usedto RESET.

A memory cell with thinner MeOx layer and lower effective electroninjection energy barrier is formed in the direction of polarity withlower electron injection energy barrier. Therefore, it reduces formingvoltage and surge current. A current limit, such as the select devicedescribed above, can further protect the memory element to operate inthe high resistance state (1M ohm to 1000M ohm) in both SET and RESEToperation. This ensures that memory element takes most of the voltageapplied. Therefore, a lower voltage is required from the power source,resulting in less operational current. In this way, the operationalvoltage and current are reduced.

Looking back at FIG. 11A, a split gate architecture was described there.While this design does work well, it has some drawbacks in that thearchitecture limits the ability to scale the memory design and canresult in a lower than ideal Idsat. Additionally, in someimplementations, the TFT-gate thickness is so thin (e.g., ˜10 nm) thatthe sheet-resistor of TFT-gate is very high (˜2K ohm/sq). Then, the RCswitching delay of the selected TFT gate is very long (e.g., >1 us) toreduce the READ/WRITE performance. Therefore, in an array design,TFT-gate has to be segmented frequently to reduce RC with die sizepenalty.

To solving above problems, there is a “shared-gate VTFT structure” asshown in FIGS. 10A/10B. The VTFT-gate (Vertical Thin Film Transistor) isshared between adjacent vertically bit lines (VBL's) at the same side.The shared-gate VTFT (Vertical Thin Film Transistor) structure is ableto solve the three challenges noted above for the split gatearchitecture. However, in some cases, the shared-gate VTFT structure cansuffer from unwanted disturbs on half selected vertical bit lines.

FIGS. 20, 21A-21B, 22A-22B and 23A-23B provide respective crosssectional views of a process of forming a three-dimensional memorydevice similar such as that shown in FIG. 10C. A similar process may beused to form the structure of FIGS. 11A-11B. The difference betweenFIGS. 11A-11B versus 10C/20-23B is that in the latter ones the deeptrench is shown extending down only partially into the P− channel regionwhile in the former (11A-11B) the deep trench extends fully through theP− channel region into vertical source region. An advantage of etchingdown only partially into the channel region as shown in FIGS. 20-23B isthat less process time and materials are consumed by not going deeper.Sufficient isolation between the partly spilt-apart bit line selectordevices may be obtained without cutting through the source regions. Inthe embodiment of FIGS. 20-23B, the P− channel region T-bones into ahorizontal source region 2504 s. It is within the contemplation of thepresent disclosure to provide embodiments with different extents of thedeep trench (2571 in FIG. 23B) from those extending down only partiallyinto the P− channel region (per FIG. 23B) to those extending partiallyinto the source region (per FIGS. 11A-11B) and even to those where thedeep trench extends down to the level of the global bit line (e.g., GBL2526). The formation of immediately adjacent andisolated-from-one-another local bit lines, such as 530 a and 530 b inFIG. 11A and such as 2530 b″ and 2530 c″ in FIG. 23B is basically thesame. For FIGS. 20, 21A-21B, 22A-22B and 23A-23B reference numbers inthe 2500 century series are used in correspondence with those of the 500century series of FIG. 11A. Accordingly, repetitive ones of details areleft out here.

Starting with FIG. 20, an N+ heavily doped polysilicon line 2524 isprovided extending in the X-direction on top of a corresponding metalGBL line 2526 with an ohmic contact there between. Spaced apart pillarsof alternating dielectric and conductor (e.g., metal) are formed atopthe polysilicon line 2524. In the illustrated embodiment, selector gatelines 2582 a (SG11), 2582 b (SG12), 2584 a (SG21) and 2584 b (SG22) areformed on a thin dielectric layer atop the polysilicon line 2524, wherethe selector gate lines, SG11-SG22, extend in the Y-direction over aplurality of spaced apart N+ doped source lines similar to theillustrated one 2524 with all similarly extending in the X-direction.The selector gate lines (2582 a-2584 b) may be composed of heavily dopedgate polysilicon and/or a metal or metal silicide. Capacitive couplingbetween the selector gate lines (2582 a-2584 b) and the under-crossingsource lines (e.g., 2524) should be relatively weak while capacitivecoupling between the selector gate lines (2582 a-2584 b) and theirrespectively adjacent P− channel regions (e.g., 2504 c) should besubstantially stronger. The dielectric thicknesses in the horizontal andvertical directions off the selector gate line surfaces areappropriately controlled. In addition to the dielectric betweenimmediately adjacent selector gate lines (e.g., 2584 a-2584 b) andbetween each and its respective source and channel regions, furtherdielectric 2534 a is deposited above the spaced apart selector gatelines, SG11-SG22 at least to vertical height extent planned for thedrain regions (e.g., 2504 d) and an etch-back stop layer 2504 e. In oneembodiment, a CVD process such as the Applied Materials Eterna™dielectric one is used for filling dielectric about and above theselector gate lines (2582 a-2584 b).

Alternating layers of unpatterned metal such as 2536 a and dielectricsuch as 2534 b are stacked one above the next, with the topmostdielectric layer 2534 e being substantially thicker than the others. Afirst trench-forming etch (not shown) extends from the topmostdielectric layer 2534 e down to the N+ polysilicon lines 2524 (oneshown) so as to form the illustrated pillars having their metal layers(e.g., 2536 a, 2536 b, 2536 c, 2536 d, . . . ) patterned to definerespective ones of patterned word lines (e.g., WL11, WL12, . . . WL23,WL24, . . . ) where it is understood that the illustrated number of foursuch layers is merely exemplary and not limiting. It is also understoodthat the patterned word lines may have comb-like structures similar tothe ones shown in FIG. 14 except that in the present case there will betwo rows of immediately adjacent and isolated-from-one-another local bitlines (e.g., 2530 b and 2530 c of FIG. 23B) between the fingers ofinterleaved combs rather than just one row of bit lines.

Still referring to FIG. 20, into the bottoms of the first formedtrenches there is deposited a P− doped polysilicon layer 2504 c thatwill define channel regions (c) of respective, upside down T-shapedtransistors where the N+ regions like 2504 s of N+ polysilicon line 2524define the horizontal cross bars of the T-shapes and serve as therespective sources of such being formed transistors. Next an N+ dopedpolysilicon layer 2504 d is deposited to form the respective transistordrains (d). The recited order of depositions and masked etchings can bevaried and one is described here is merely for illustration.

Next an etch stop layer 2504 e such as one composed of TiN is depositedinto the trenches atop the N+ doped polysilicon drain areas 2504 d. Thisis followed by a second selective etch that creates smaller trenchesspaced apart in the Y-direction (not shown, into the plane of thedrawing) between the formed TiN topped transistors (2504) of therespective global bit lines (GBL's) 2526. The smaller trenches arefilled with an appropriate dielectric.

Next, in FIG. 21A, a predetermined NVM cell forming material 2532 suchas HfO is isotropically deposited to a pre-specified thickness on theformed pillars including on their sidewalls.

Referring to FIG. 21B, a selective and anisotropic back etch isperformed on the deposited NVM cell forming material 2532 using thetopmost thicker dielectric 2534 e′ and also the TiN layer 2504 e′ asetch stops. The once exposed-to-back-etch reference numbers ofdielectric 2534 e′ and TiN regions 2504 e′ are primed to indicate thatthey have been subjected to an etching environment. The anisotropic backetch leaves behind vertically rising layers 2532 a, 2532 b, 2532 c and2532 d, of the NVM cell forming material on the sidewalls of the stackedword line pillars as shown in FIG. 21B.

Next, in FIG. 22A, a predetermined bit line forming material 2530 suchas N+ doped polysilicon is isotropically deposited to a pre-specifiedthickness.

Subsequently, in FIG. 22B, a selective and anisotropic back etch isperformed on the deposited bit line forming material 2530 using thetopmost thicker dielectric 2534 e″ and also the TiN layer 2504 e″ asetch stops. The twice exposed to back etch reference numbers ofdielectric 2534 e″ and TiN regions 2504 e″ are twice-primed to indicatethat they have been at least twice subjected to etchings. Theanisotropic back etch leaves behind vertically rising layers 2530 a,2530 b, 2530 c and 2530 d, on the NVM cell forming material layersalready formed on the sidewalls of the stacked word line pillars asshown in FIG. 22B.

Referring to FIG. 23A, a photo mask with narrower slits than used beforeis used for a further selective, anisotropic and this time a deep etchis performed down at least to a level below the tops of the P− dopedpolysilicon channel regions 2504 c′. The prime in reference number 2504c′ indicates here that the deep etch has breached into the layer of theP− doped polysilicon channel regions. (As explained in various sectionshere, it is within the contemplation of the present disclosure to varythe depth of the deep etch so that, for example; in the slightlydifferent case of FIG. 11A, the deep etch extends into the N+ sourceregions. In yet another embodiment (not shown), the deep etch may extendto the level of the tops of the GBL lines 2526.)

Reference numbers 2550, 2551 and 2552 of FIG. 23A indicate the areas ofthe formed deep trenches in the illustrated embodiment 2300 a. The deepetch is designed to cut through the TiN layers (now referenced as 2504f) and to remove some of top material on the upper thick dielectric (nowreferenced as 2534 f). Removal of some of the top material on the upperthick dielectric is represented by dashed boxes 2565. Additionally, theheights of the bit lines 2530 a′-2530 d′ and of the NVM cell formingmaterial layers 2532 a′-24532 d′ might altered by the aggressive deepetch process, thus possibly resulting in a nonplanar top surface for thedevice 2300 a.

In FIG. 23B, the deep trenches 2550, 2551 and 2552 are filled with anappropriate dielectric such as an Applied Materials Eterna™ dielectricto thereby produce inter-pillar isolation regions 2570, 2571 and 2572and the top of the insulator-filled structure (2300 b) is planarized forexample with an appropriate CMP process. In an alternate embodiment, thetrenches are not filled so as to thereby leave behind air-filledinter-pillar isolation regions.

As seen in FIG. 23B, the produced structure 2300 b comprises pairs ofimmediately adjacent and isolated-from-one-another local bit lines suchas 2530 b″ and 2530 c″ each having a respective vertically orientedselector device (e.g., the transistors controlled by SG12 and SG21). Inthe illustrated embodiment 2300 b, the respective vertically orientedselector devices of the bit line pairs (e.g., 2530 b″ and 2530 c″) sharea wide source region 2504 s that makes wide ohmic contact with theunderlying metal line 2526 of the corresponding global bit line (GBL).Thus the drain-to-source resistance (RdsON) of each vertically orientedselector device is reduced due to the sharing of the wide source region2504 s. In an alternate embodiment, the deep trenches 2550, 2551 and2552 of FIG. 23A may be bored deeper down to penetrate below the top ofthe layer 2504 s (thus fully dividing the P− channel regions) or evendeeper down to hit the GBL metal lines 2526 (thus fully dividing therespective vertically oriented selector devices of the pairs ofimmediately adjacent and isolated-from-one-another local bit lines suchas 2530 b″ and 2530 c″. In yet another embodiment, the structure 2200 bof FIG. 22B has a further layer (not shown) of predetermined thicknessdeposited on it and then etched back where the further layer is ametallic one that can adhere to the polysilicon material of bit lines2530 a-2530 d (for example by forming a bonding silicide) and can reducethe resistances of the resulting and vertically extending, local bitlines (LBL's).

The foregoing detailed description has been presented for purposes ofillustration and description. It is not intended to be exhaustive orlimiting to the precise form disclosed. Many modifications andvariations are possible in light of the above teachings. The describedembodiments were chosen in order to best explain the principles of thedisclosed technology and its practical application, to thereby enableothers skilled in the art to best utilize the technology in variousembodiments and with various modifications as are suited to theparticular use contemplated.

1.-13. (canceled) 14.-16. (canceled)
 17. A method of fabricating anon-volatile data storage device comprising: providing a substratehaving control elements monolithically integrated therein; providingabove the substrate as a first structure, a three dimensionalarrangement of non-volatile storage elements, and alternatinghorizontally extending layers of conductive word line layers andinsulative layers; providing above the substrate and below the firststructure, a three dimensional arrangement of vertically oriented, bitline selector devices, each of the bit line selector devices having arespective output terminal and a respective control terminal; providingabove the substrate and below the control terminals of the bit lineselector devices, a plurality of spaced apart global bit lines;patterning the alternating layers of conductive word line layers andinsulative layers so as to form spaced apart pillars each having thealternating layers of conductive word lines and insulation, the pillarshaving respective vertically extending sidewalls; depositing verticallyextending films of memory cell forming material on the sidewalls of thepillars; depositing vertically extending films of bit line formingconductive material on sidewalls of the deposited films of memory cellforming material, the bit line forming films also extending horizontallyat respective bottoms of the bit line forming films so as to continueone into the next, the respective bottoms of the bit line forming filmsmaking electrical coupling with output terminals of corresponding bitline selector devices respectively disposed below the respective filmsof memory cell forming material; and creating electrically isolatingseparations between the deposited films of bit line forming conductivematerial so as to form vertically extending individual bit lines suchthat each individual bit line is electrically isolated from adjacentother individual bit lines extending vertically along adjacentvertically extending sidewalls of adjacent pillars.
 18. The method offabricating of claim 17 and further comprising: filling gaps between theadjacent and isolated from one another individual bit lines with aninsulative gap filling material.
 19. The method of fabricating of claim17 wherein the memory cell forming material comprises a Hafnium Oxide.20. The method of fabricating of claim 17 and further comprising:attaching respective vertically extending and resistance lowering layersto the respective deposited and vertically extending films of bit lineforming conductive material, the resistance lowering layers comprisingat least one of a conductive material having a lower resistivity thanthat of the bit line forming conductive material and a material that canreact with the bit line forming conductive material to thereby form avertically extending reaction product layer having a lower resistivitythan that of the bit line forming conductive material.
 21. The method ofclaim 20 wherein: the conductive material of the resistance loweringlayers includes a metal.
 22. The method of claim 20 wherein: thereaction product layer includes a silicide.
 23. The method of claim 17wherein: the memory cell forming material comprises a reversibleresistance-switching material.
 24. The method of claim 17 wherein: saidpatterning of the alternating layers to form spaced apart pillars causesthe respective output terminals of pairs of successive bit line selectordevices to be disposed in areas between successive ones of the pillarsand causes the respective control terminals of such pairs of successivebit line selector devices to be disposed in areas under the successiveones of the pillars.
 25. The method of claim 17 wherein: said patterningof the alternating layers to form spaced apart pillars is preceded byformation of conductive etch stops on top of the respective outputterminals of the bit line selector devices, the etch stops functioningas stops for an anisotropic etch that forms said spaced apart pillars.26. The method of claim 25 wherein: said conductive etch stops includeTiN.
 27. The method of claim 25 wherein: said depositing of thevertically extending films of bit line forming conductive materialcauses the films of bit line forming conductive material to contactcorresponding ones of the conductive etch stops.
 28. The method of claim27 wherein: said creating of the electrically isolating separationsbetween the deposited films of bit line forming conductive material isfollowed by an anisotropic deep etch that cuts through the conductiveetch stops.
 29. The method of claim 28 wherein: said anisotropic deepetch further cuts through a first material layer forming the respectiveoutput terminals of the vertically oriented, bit line selector devices;and said anisotropic deep etch further cuts into a second materiallayer, below the first material layer and forming respective channelregions of the vertically oriented, bit line selector devices.
 30. Themethod of claim 29 wherein: said anisotropic deep etch does not cutthrough a third material layer, below the second material layer andforming respective input terminals of respective ones of the verticallyoriented, bit line selector devices, whereby the respective inputterminals of respective ones of the vertically oriented, bit lineselector devices remain connected to one another.
 31. The method ofclaim 30 wherein: the third material layer includes an N-typesemiconductive material; the second material layer includes a P-typesemiconductive material; and the first material layer includes an N-typesemiconductive material.
 32. The method of claim 30 wherein: saidproviding of the spaced apart global bit lines is followed by couplingof the third material layer of in line ones of the vertically oriented,bit line selector devices to a corresponding one of the global bitlines.
 33. The method of claim 32 wherein: the global bit lines includea conductive metal and the third material layer includes an N+ dopedsemiconductive material making ohmic contact with the conductive metal.34. The method of claim 28 and further comprising: after saidanisotropic deep etch, filling a deep trench formed by the anisotropicdeep etch with a dielectric filler material.
 35. A method of fabricatinga non-volatile data storage device comprising: forming above asubstrate, a first material layer for defining source regions ofvertically oriented, bit line selector devices; forming above the firstmaterial layer, a plurality of spaced apart pillars each havingalternating layers of conductive word lines and insulation, the pillarshaving respective vertically extending sidewalls; forming above thefirst material layer and under the pillars, spaced apart pairs ofconductive selector lines that each function as a control terminal for arespective one of the bit line selector devices; forming above the firstmaterial layer and between areas occupied by the pillars, a secondmaterial layer for defining channel regions of the vertically oriented,bit line selector devices, the defined channel regions being disposedfor capacitive coupling to respective adjacent ones of the conductiveselector lines; forming above the second material layer and betweenareas occupied by the pillars, a third material layer for defining drainregions of the vertically oriented, bit line selector devices; formingabove the third material layer and between areas occupied by thepillars, an etch stop material; depositing a film of memory cell formingmaterial on the sidewalls of the pillars and above the etch stopmaterial; and depositing a film of bit line forming conductive materialon the deposited film of memory cell forming material.
 36. The method ofclaim 35 and further comprising: etching through the deposited film ofmemory cell forming material in areas between those occupied by thepillars; etching through the deposited film of bit line formingconductive material in the areas between those occupied by the pillars;and performing a deep etch cutting through the etch stop material andinto the third material layer that defines the drain regions of thevertically oriented, bit line selector devices.